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Número de pieza TDA1015
Descripción 1 to 4 W audio power amplifier
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! TDA1015 Hoja de datos, Descripción, Manual

INTEGRATED CIRCUITS
DATA SHEET
TDA1015
1 to 4 W audio power amplifier
Product specification
File under Integrated Circuits, IC01
November 1982

1 page




TDA1015 pdf
Philips Semiconductors
1 to 4 W audio power amplifier
Product specification
TDA1015
D.C. CHARACTERISTICS
Supply voltage range
Repetitive peak output current
Total quiescent current at VP = 12 V
VP
IORM
Itot
3,6 to 18
<2
typ. 14
< 25
V
A
mA
mA
A.C. CHARACTERISTICS
Tamb = 25 °C; VP = 12 V; RL = 4 ; f = 1 kHz unless otherwise specified; see also Fig.3.
A.F. output power at dtot = 10% (note 1)
with bootstrap:
VP = 12 V; RL = 4
VP = 9 V; RL = 4
VP = 6 V; RL = 4
without bootstrap:
Po typ. 4,2
Po typ. 2,3
Po typ. 1,0
VP = 12 V; RL = 4
Voltage gain:
Po typ. 3,0
preamplifier (note 2)
power amplifier
total amplifier
Gv1
Gv2
Gv tot
typ. 23
typ. 29
typ. 52
49 to 55
Total harmonic distortion at Po = 1,5 W
dtot typ. 0,3
< 1,0
Frequency response; 3 dB (note 3)
B 60 Hz to 15
Input impedance:
preamplifier (note 4)
> 100
|Zi1| typ. 200
power amplifier
Output impedance preamplifier
Output voltage preamplifier (r.m.s. value); dtot < 1% (note 2)
Noise output voltage (r.m.s. value; note 5)
|Zi2|
|Zo1|
Vo(rms)
typ.
typ.
typ.
20
1
0,8
RS = 0
Vn(rms)
RS = 10 k
Vn(rms)
Noise output voltage at f = 500 kHz (r.m.s. value); B = 5 kHz; RS = 0 Vn(rms)
Ripple rejection (note 6); f = 100 Hz
RR
typ.
typ.
typ.
typ.
0,2
0,5
8
38
W
W
W
W
dB
dB
dB
dB
%
%
kHz
k
k
k
k
V
mV
mV
µV
dB
November 1982
5

5 Page





TDA1015 arduino
Philips Semiconductors
1 to 4 W audio power amplifier
Product specification
TDA1015
Fig.12 Noise output voltage as a function of frequency; curve a: total amplifier; curve b: power amplifier;
B = 5 kHz; RS = 0; typical values.
November 1982
Fig.13 Voltage gain as a function of R2 (see Fig.4).
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