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PZTA92 반도체 회로 부품 판매점

PNP High Voltage Amplifier



Fairchild Semiconductor 로고
Fairchild Semiconductor
PZTA92 데이터시트, 핀배열, 회로
March 2014
MMBTA92 / PZTA92
PNP High-Voltage Amplifier
Description
This device is designed for high-voltage driver applica-
tions. Sourced from process 76.
C
E
SOT-23
Mark: 2D
B
Figure 1. MMBTA92 Device Package
C
SOT-223
E
C
B
Figure 2. PZTA92 Device Package
Ordering Information
Part Number
MMBTA92
PZTA92
Top Mark
2D
A92
Package
SOT-23 3L
SOT-223 4L
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
TJ, TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
-300
-300
-5
-500
-55 to +150
Unit
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MMBTA92 / PZTA92 Rev. 1.1.0
1
www.fairchildsemi.com


PZTA92 데이터시트, 핀배열, 회로
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RθJA
Total Device Dissipation
Derate Above 25°C
Thermal Resistance, Junction to Ambient
Max.
MMBTA92(3) PZTA92(4)
350 1000
2.8 8.0
357 125
Unit
mW
mW/°C
°C/W
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Parameter
Collector-Emitter Breakdown
Voltage(5)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
hFE DC Current Gain(5)
VCE(sat)
VBE(sat)
fT
Collector-Emitter Saturation
Voltage(5)
Base-Emitter Saturation Voltage(5)
Current Gain - Bandwidth Product
Ccb Collector-Base Capacitance
Conditions
IC = -1.0 mA, IB = 0
IC = -100 μA, IE = 0
IE = -100 μA, IC = 0
VCB = -200 V, IE = 0
VEB = -3.0 V, IC = 0
IC = -1.0 mA, VCE = -10 V
IC = -10 mA, VCE = -10 V
IC = -30 mA, VCE = -10 V
IC = -20 mA, IB = -2.0 mA
IC = -20 mA, IB = -2.0 mA
IC = -10 mA, VCE = -20 V,
f = 100 MHz
VCB = -20 V, IE = 0,
f = 1.0 MHz
Note:
5. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Min.
-300
-300
-5.0
25
40
25
50
Max.
-0.25
-0.1
250
Unit
V
V
V
μA
μA
-0.5 V
-0.9 V
MHz
6.0 pF
© 1997 Fairchild Semiconductor Corporation
MMBTA92 / PZTA92 Rev. 1.1.0
2
www.fairchildsemi.com




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