PB50 반도체 회로 부품 판매점
POWER BOOSTER AMPLIFIER
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 ETC |
MICROTECHNOLOGY
POWER BOOSTER AMPLIFIER
PB50
HTTP://WWW.APEXMICROTECH.COM (800) 546-APEX (800) 546-2739
FEATURES
• WIDE SUPPLY RANGE — ±30V to ±100V
• HIGH OUTPUT CURRENT — Up to 2A Continuous
• VOLTAGE AND CURRENT GAIN
• HIGH SLEW RATE — 50V/µs Minimum
• PROGRAMMABLE OUTPUT CURRENT LIMIT
• HIGH POWER BANDWIDTH — 160 kHz Minimum
• LOW QUIESCENT CURRENT — 12mA Typical
APPLICATIONS
• HIGH VOLTAGE INSTRUMENTATION
• Electrostatic TRANSDUCERS & DEFLECTION
• Programmable Power Supplies Up to 180V p-p
DESCRIPTION
The PB50 is a high voltage, high current amplifier designed
to provide voltage and current gain for a small signal, general
purpose op amp. Including the power booster within the
feedback loop of the driver amplifier results in a composite
amplifier with the accuracy of the driver and the extended
output voltage range and current capability of the booster. The
PB50 can also be used without a driver in some applications,
requiring only an external current limit resistor to function
properly.
The output stage utilizes complementary MOSFETs, pro-
viding symmetrical output impedance and eliminating second-
ary breakdown limitations imposed by Bipolar Junction Tran-
sistors. Internal feedback and gainset resistors are provided
for a pin-strappable gain of 3. Additional gain can be achieved
with a single external resistor. Compensation is not required
for most driver/gain configurations, but can be accomplished
with a single external capacitor. Although the booster can be
configured quite simply, enormous flexibility is provided through
the choice of driver amplifier, current limit, supply voltage,
voltage gain, and compensation.
This hybrid circuit utilizes a beryllia (BeO) substrate, thick
film resistors, ceramic capacitors and semiconductor chips to
maximize reliability, minimize size and give top performance.
Ultrasonically bonded aluminum wires provide reliable inter-
connections at all operating temperatures. The 8-pin TO-3
package is electrically isolated and hermetically sealed using
one-shot resistance welding. The use of compressible isola-
tion washers voids the warranty.
TYPICAL APPLICATION
CF
Figure 1. Inverting
composite amplifier.
VIN R I
RF
+15V
+Vs
OP
AMP
IN
COM PB50
–15V
–Vs
R CL
OUT
CC
RG
RL
EQUIVALENT SCHEMATIC
Q1
IN
4
GAIN 6.2K
7
50K
COM
5
COMP
8
Q4
3.1K
Q9
Q2
Q6
Q10
3
+Vs
Q3
Q5
Q7
OUT
1
2
CL
Q8
–Vs
6
EXTERNAL CONNECTIONS
+Vs
3
CL
2
IN 4
COM
5
TOP VIEW
R CL
OUT
1
COMP
8
CC
–Vs 6
7
GAIN
RG
APEX MICROTECHNOLOGY CORPORATION • TELEPHONE (520) 690-8600 • FAX (520) 888-3329 • ORDERS (520) 690-8601 • EMAIL [email protected]
PB50
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +VS to –VS
OUTPUT CURRENT, within SOA
POWER DISSIPATION, internal at TC = 25°C1
INPUT VOLTAGE, referred to common
TEMPERATURE, pin solder—10 sec max
TEMPERATURE, junction1
TEMPERATURE, storage
OPERATING TEMPERATURE RANGE, case
200V
2A
35W
±15V
300°C
150°C
–65 to +150°C
–55 to +125°C
SPECIFICATIONS
PARAMETER
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
CLOSED LOOP GAIN RANGE
GAIN ACCURACY, internal Rg, Rf
GAIN ACCURACY, external Rf
PHASE SHIFT
OUTPUT
VOLTAGE SWING
VOLTAGE SWING
VOLTAGE SWING
CURRENT, continuous
SLEW RATE
CAPACITIVE LOAD
SETTLING TIME to .1%
POWER BANDWIDTH
SMALL SIGNAL BANDWIDTH
SMALL SIGNAL BANDWIDTH
POWER SUPPLY
VOLTAGE, ±VS3
CURRENT, quiescent
THERMAL
RESISTANCE, AC junction to case4
RESISTANCE, DC junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
TEST CONDITIONS2
Full temperature range
AV = 3
AV = 10
F = 10kHz, AVCL = 10, CC = 22pF
F = 200kHz, AVCL = 10, CC = 22pF
Io = 2A
Io = 1A
Io = .1A
Full temperature range
Full temperature range
RL = 100Ω, 2V step
VC = 100Vpp
CC = 22pF, AV = 25, Vcc = ±100
CC = 22pF, AV = 3, Vcc = ±30
Full temperature range
VS = ±30
VS = ±60
VS = ±100
Full temp. range, F > 60Hz
Full temp. range, F < 60Hz
Full temperature range
Meets full range specifications
MIN
25
3
VS–11
VS–10
VS–8
2
50
160
±305
–25
TYP
±.75
–4.5
50
3
10
±10
±15
10
60
VS –9
VS –7
VS –5
100
2200
2
320
100
1
±60
9
12
17
1.8
3.2
30
25
MAX
±1.75
–7
25
±15
±25
±100
12
18
25
2.0
3.5
85
UNITS
V
mV/°C
kΩ
pF
V/V
%
%
°
°
V
V
V
A
V/µs
pF
µs
kHz
kHz
MHz
V
mA
mA
mA
°C/W
°C/W
°C/W
°C
NOTES: 1.
2.
3.
4.
5.
Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF (Mean Time to Failure).
The power supply voltage specified under typical (TYP) applies, TC = 25°C unless otherwise noted.
+VS and –VS denote the positive and negative supply rail respectively.
Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
+VS must be at least 15V above COM, –VS must be at least 30V below COM.
CAUTION
The PB50 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739
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제조업체: ETC
( etc )
PB50 amplifier
데이터시트 다운로드 :
[ PB50.PDF ]
[ PB50 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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