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RF Micro Devices |
4
Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
RF2043
GENERAL PURPOSE AMPLIFIER
• Final PA for Low Power Applications
• High Reliability Applications
• Broadband Test Equipment
Product Description
The RF2043 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.
45°
+ 1°
0.055
0.020
+ 0.005
+ 0.002
0.070
sq.
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
0.040
+ 0.002
0.200 sq.
Typ
4
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
RF IN 1
GND
4
MARKING - C3
3 RF OUT
2
GND
Functional Block Diagram
Package Style: Micro-X Ceramic
Features
• DC to >6000MHz Operation
• Internally matched Input and Output
• 11dB Small Signal Gain
• +35dBm Output IP3
• +18.5dBm Output Power
• Extremely Flat Gain Response
Ordering Information
RF2043
General Purpose Amplifier
RF204X PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 010110
4-1
RF2043
Absolute Maximum Ratings
Parameter
Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Rating
120
+20
-40 to +85
-60 to +150
Unit
mA
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Overall
4 Frequency Range
1dB Bandwidth
DC to >6000
5.5
Gain
11.3
11.3
10.2
11.4
11.5
11.5
9.9
Gain Flatness
±0.05
Noise Figure
7.6
Input VSWR
<1.8:1
<2.5:1
Output VSWR
<1.8:1
<2.6:1
Output IP3
Output P1dB
+34.5
+18.5
Reverse Isolation
16.5
Thermal
ThetaJC
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
149
142
Mean Time Between Failures
1.4 x 103
3.4 x 105
1.8 x 109
Power Supply
MHz
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dB
°C/W
°C
T=25 °C, VD=5.5V, ICC=70mA
Freq = 100 MHz
Freq = 1000 MHz
Freq = 2000 MHz
Freq = 3000 MHz
Freq = 4000 MHz
Freq = 6000 MHz
100MHz to 2000MHz
Freq = 1000 MHz
In a 50Ω system, DC to 3000MHz
In a 50Ω system, 3000MHz to 6000MHz
In a 50Ω system, DC to 3000MHz
In a 50Ω system, 3000MHz to 6000MHz
Freq = 1000 MHz
Freq = 1000 MHz
Freq = 1000 MHz
ICC=70mA, PDISS=370mW
TAMB = +85 °C
years
years
years
TAMB = +85 °C
TAMB = +25 °C
TAMB = -40 °C
With 22Ω bias resistor
Device Operating Voltage
Operating Current
5.0 5.5 6.0 V At pin 3 with ICC=70mA
70 mA
4-2 Rev A4 010110
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