파트넘버.co.kr RF5176 데이터시트 PDF


RF5176 반도체 회로 부품 판매점

3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER



RF Micro Devices 로고
RF Micro Devices
RF5176 데이터시트, 핀배열, 회로
Preliminary
2
RF5176
3V W-CDMA POWER 1900MHZ/
3V LINEAR POWER AMPLIFIER
Typical Applications
• 3V 1850-1910MHz CDMA-2000 Handsets • Commercial and Consumer Systems
• 3V 1920-1980MHz W-CDMA Handsets • Portable Battery-Powered Equipment
• Spread-Spectrum Systems
2
Product Description
The RF5176 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 3V
CDMA-2000 and W-CDMA handsets as well as other
applications in the 1850MHz to 2000MHz band. The
device is self-contained, and the output can be easily
matched to obtain optimum power, efficiency, and linear-
ity characteristics over all recommended supply voltages.
The device has a continuously variable bias circuit to
allow idle current to be optimized for a given output
power.
1.00
0.90
0.60
0.24 typ
3 0.20
4.00
sq.
0.65
0.30
4 PLCS
2.10
sq.
12°
MAX
0.75
0.50
0.05 0.50
Dimensions in mm.
NOTES:
1 Shaded lead is Pin 1.
Note orientation of package.
2 Pin 1 identifier must exist on top surface of package by identification
mark or feature on the package body. Exact shape and size is optional.
3 Dimension applies to plated terminal: to be measured between 0.02 mm
and 0.25 mm from terminal end.
4 Package Warpage: 0.05 mm max.
5 Die Thickness Allowable: 0.305 mm max.
0.23
0.13
4 PLCS
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
20 19 18 17 16
VREG1 1
15 NC
VCC BIAS 2
14 NC
VREG2 3
13 VCC1
VS2 4
12 VCC1
BIAS GND 5
11 NC
6 7 8 9 10
Functional Block Diagram
Package Style: LCC, 20-Pin, 4x4
Features
• Single 3V Supply
• 27dBm Linear Output Power
• 26dB Linear Gain
• 40% Linear Efficiency
• On-board Power Down Mode
Ordering Information
RF5176
RF5176 PCBA
3V W-CDMA Power 1900MHZ/ 3V Linear Power
Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A0 010910
2-197


RF5176 데이터시트, 핀배열, 회로
RF5176
Preliminary
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage (RF off)
+8.0
Supply Voltage (POUT31dBm)
Bias Voltage (VBIAS)
2 Control Voltage (VREG)
Input RF Power
Operating Case Temperature
Storage Temperature
+5.0
+3.0
+3.0
+6
-30 to +100
-30 to +150
Unit
VDC
VDC
VDC
VDC
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Usable Frequency Range
Typical Frequency Range
Linear Gain
Second Harmonic (including
second harmonic trap)
Third Harmonic
Maximum Linear Output Power
(W-CDMA Modulation)
Total Linear Efficiency
Adjacent Channel Power
Rejection @ 5 MHz
Adjacent Channel Power
Rejection @ 10MHz
Noise Power
Input VSWR
Output Load VSWR
Power Supply
Power Supply Voltage
Idle Current
VREG Current
Turn On/Off time
Total Current (Power down)
VREG “Low” Voltage
VREG “High” Voltage
Specification
Min.
Typ.
Max.
1850
3.0
1850 to 1910
1920 to 1980
26
-55
-50
27
40
-40
-50
-144
< 2:1
3.4
80
10
0
2.5
2000
-38
-48
5:1
5.0
10
0.2
Unit Condition
MHz
MHz
MHz
dB
dBc
T=25°C, VCC=3.4V,
Freq=1920MHz to 1980MHz, VREG=2.5V,
unless otherwise specified
dBc
dBm
%
dBc
dBc
dBm/Hz
POUT = 27 dBm
POUT=27dBm, W-CDMA Modulation,
3GPP 3.2 03-00 DPCCH + 1 DPDCH
POUT=27dBm, W-CDMA Modulation,
3GPP 3.2 03-00 DPCCH + 1 DPDCH
POUT = +27 dBm,
Rx Band 2110MHz to 2170MHz
No oscillations
V
mA VREG=2.5V
µA Total pins 1 and 3, VREG=2.5V
ns
µA VREG=Low
V
V See Alternative Biasing Network table follow-
ing the application schematic.
2-198
Rev A0 010910




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