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RF Micro Devices |
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Typical Applications
• IEEE802.11B WLAN Applications
• IEEE802.11G WLAN Applications
• 2.5GHz ISM Band Applications
RF5117
3V, 1.8GHz TO 2.8GHz
LINEAR POWER AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Spread-Spectrum and MMDS Systems
Product Description
The RF5117 is a linear, medium-power, high-efficiency
amplifier IC designed specifically for battery-powered
WLAN applications such as PC cards, mini PCI, and
compact flash applications. The device is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process, and has been designed for use
as the final RF amplifier in 2.5GHz WLAN and other
spread-spectrum transmitters. The device is provided in a
3mmx3mm, 16-pin, leadless chip carrier with a backside
ground. The RF5117 is designed to maintain linearity
over a wide range of supply voltage and power output.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
16 15 14 13
RF IN 1
12 RF OUT
BIAS GND1 2
11 RF OUT
PWR SEN 3
10 RF OUT
PWR REF 4
Bias
9 NC
5678
-A-
3.00 SQ.
0.15 C A
2 PLCS
1.50 TYP
2 PLCS
0.15 C B
1.00
0.85
0.80
0.65
0.05 C
0.05
0.01
2 PLCS
0.15 C B
-B-
1.37 TYP
12°
MAX
2 PLCS
0.15 C A
2.75 SQ.
Shaded lead is pin 1.
0.60
0.24
TYP
Dimensions in mm.
0.10 M C A B
0.30
0.18
-C-
0.45
0.00
4 PLCS
11..6355SQ.
0.23
0.13
4 PLCS
0.50
0.55
0.30
SEATING
PLANE
Package Style: QFN, 16-Pin, 3x3
Features
• Single 3.3V Power Supply
• +30dBm Saturated Output Power
• 26dB Small Signal Gain
• High Linearity
• 1800MHz to 2800MHz Frequency Range
• +17dBm PO, 11G, <3% EVM
Ordering Information
RF5117
3V, 1.8GHz to 2.8GHz Linear Power Amplifier
RF5117 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A7 041007
2-573
RF5117
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (VREG)
DC Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Moisture sensitivity
Rating
-0.5 to +6.0
-0.5 to 3.5
600
+10
-40 to +85
-40 to +150
JEDEC Level 3
Unit
VDC
V
mA
dBm
°C
°C
Refer to “Handling of PSOP and PSSOP Products”
on page 16-15 for special handling information.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
Overall
Frequency Range
Maximum Linear Output Power
VCC = 3.0 V
VCC = 5.0 V
Linear Efficiency
Error Vector Magnitude (EVM)
1800 to 2800
22
27
25
2.5
Small Signal Gain
Reverse Isolation
Second Harmonic
802.11B Adjacent Channel
Power
Alternate Channel Power
Isolation
Input Impedance
Input VSWR
Power Down
VREG “ON”
VREG “OFF”
Power Supply
Operating Voltage
Current Consumption
VREG Current (Total)
24 26 28.5
30
-35
-38 -32
-56 -52
35 45
50
2:1
2.1 2.7 3.0
0 0.5
3.0 to 5.0
500
200
110
5
10
220
10
15
Unit
MHz
dBm
dBm
%
%
dB
dB
dBc
dBc
dBc
dB
Ω
V
V
V
mA
mA
mA
mA
mA
Condition
T=25 °C, VCC=3.0V, VREG=2.7V,
Freq=2450MHz, circuit per evaluation board
schematic.
With 802.11B modulation (11Mbit/s) and
meeting 802.11B spectral mask.
PO=17dBm, EVM increases over 11g,
54MBPS signal input
PIN = -7 dBm
POUT=21dBm, VCC=3.0V
POUT=21dBm, VCC=3.0V
In “OFF” state, PIN=-5.0dBm
With external matching
With external matching
Voltage supplied to control input; device is
“ON”
Voltage supplied to control input; device is
“OFF”
At max output power
POUT=21dBm, VCC=3.0V
Idle current, VCC=3.0V, VREG=2.7V
VCC = 3.0 V
VCC = 5.0 V
2-574
Rev A7 041007
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