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RF3163PCBA 반도체 회로 부품 판매점

3V 900MHZ LINEAR POWER AMPLIFIER MODULE



RF Micro Devices 로고
RF Micro Devices
RF3163PCBA 데이터시트, 핀배열, 회로
0
Typical Applications
• 3V CDMA/AMPS Cellular Handset
• 3V CDMA2000/1XRTT Cellular Handset
RF3163
3V 900MHZ LINEAR POWER
AMPLIFIER MODULE
• 3V CDMA2000/1X-EV-DO US-Cellular
Handset
• Spread-Spectrum System
Product Description
The RF3163 is a high-power, high-efficiency linear ampli-
fier module specifically designed for 3V handheld sys-
tems. The device is manufactured on an advanced third
generation GaAs HBT process, and was designed for use
as the final RF amplifier in 3V IS-95/CDMA 2000
1X/AMPS handheld digital cellular equipment, spread-
spectrum systems, and other applications in the 824MHz
to 849MHz band. The RF3163 has a digital control line
for low power applications to lower quiescent current. The
RF3163 is assembled in a 16-pin, 3mmx3mm, QFN
package.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
16 15 14 13
NC 1
VREG 2
VMODE 3
RF IN 4
Bias
12 RF OUT
11 VCC2
10 VCC2
9 VCC2
5678
0.10 C
3.00
-A-
-B-
1.00
0.80
3.00
0.10 C
0.10 C
0.10 C
1.45
+0.10
-0.15
0.50 TYP.
Shaded areas represent pin 1.
Dimensions in mm.
1.45
+0.10
-0.15
0.30
0.18
TYP.
0.10 M C A B
0.10 C
0.50
0.30
TYP.
-C-
SEATING
PLANE
0.08 C
SCALE:
NONE
0.05
0.00
Package Style: QFN, 16-Pin, 3x3
Features
• Input Internally Matched@50
• Output Internally Matched
• 28dBm Linear Output Power
• 41% Peak Linear Efficiency
• -51dBc ACPR @ 885kHz
• 55% AMPS Efficiency
Ordering Information
RF3163
3V 900MHz Linear Power Amplifier Module
RF3163 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A0 040730
2-689


RF3163PCBA 데이터시트, 핀배열, 회로
RF3163
Absolute Maximum Ratings
Parameter
Supply Voltage (RF off)
Supply Voltage (POUT31dBm)
Control Voltage (VREG)
Input RF Power
Mode Voltage (VMODE)
Operating Temperature
Storage Temperature
Moisture Sensitivity Level
(IPC/JEDEC J-STD-20)
Rating
+8.0
+5.2
+3.9
+10
+3.9
-30 to +110
-40 to +150
MSL 2 @ 260°C
Unit
V
V
V
dBm
V
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
High Power Mode
(VMODE Low)
Operating Frequency Range
Linear Gain
Second Harmonics
Third Harmonics
Maximum Linear Output
Linear Efficiency
Maximum ICC
ACPR @ 885kHz
ACPR @ 1.98MHz
Input VSWR
Stability in Band
Stability out of Band
Noise Power
Low Power Mode
(VMODE High)
Operating Frequency Range
Linear Gain
Maximum Linear Output
Maximum ICC
ACPR @885kHz
ACPR @1.98MHz
Input VSWR
Output VSWR Stability
Specification
Min.
Typ.
Max.
824 849
26.0 28.5
-35 -30
-40 -30
28
36 41
455 515
-51 -46
-58 -55
2:1
6:1
10:1
-133
824 849
21 24
18
125
-51 -46
-61 -56
2:1
6:1
10:1
Unit Condition
MHz
dB
dBc
dBc
T=25oC Ambient, VCC=3.4V, VREG=2.8V,
VMODE=0V, and POUT=28dBm for all
parameters (unless otherwise specified).
%
mA
dBc
dBc
dBm/Hz
MHz
dB
No oscillation>-70dBc
No damage
At 45MHz offset.
T=25oC Ambient, VCC=3.4V, VREG=2.8V,
VMODE=2.8V, and POUT=18dBm for all
parameters (unless otherwise specified).
mA POUT=16dBm
dBc
dBc
No oscillation>-70dBc
No damage
2-690
Rev A0 040730




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RF3163PCBA

3V 900MHZ LINEAR POWER AMPLIFIER MODULE - RF Micro Devices