파트넘버.co.kr RF2475 데이터시트 PDF


RF2475 반도체 회로 부품 판매점

DUAL-BAND LOW NOISE AMPLIFIER/MIXER WITH FREQUENCY DOUBLER



RF Micro Devices 로고
RF Micro Devices
RF2475 데이터시트, 핀배열, 회로
Preliminary
8
RF2475
DUAL-BAND LOW NOISE AMPLIFIER/MIXER
WITH FREQUENCY DOUBLER
Typical Applications
• TDMA Handsets
Product Description
The RF2475 includes two downconverting mixers and
associated LNAs. It is designed for IS136 handset appli-
cations in the cellular 800MHz and PCS 1900MHz
bands. Each LNA has a gain bypass mode, which is con-
trolled by the gain select pin. The device internally ties the
two mixer outputs together, providing interface to a single
IF SAW filter. A frequency doubler is provided to supply
the LO signal to the PCS mixer and feeds the PCS trans-
mit LO output buffer. A cellular LO output buffer is also
included. The device is fabricated using Gallium Arsenide
HBT technology and is packaged in a 28-pin, 5mmx5mm
leadless package.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe
28 27 26 25 24 23 22
LNA VCC19 1
21 LO IN8
GND 2
20 GND
LNA IN19 3
X2 19 IF A
GND 4
18 IF B
LNA IN8 5
17 GND
GND 6
16 VCC DOUBLER
GAIN SEL 7
8
15 VCC TX19
9 10 11 12 13 14
Functional Block Diagram
1.00
0.85
0.80
0.65
Typ
0.60
0.24
2 0.30
0.18
5.00
sq.
2.50
Typ.
0.65
0.30
4 PLCS
2.85 sq.
2.55
12°
MAX
0.75
0.50
0.05
0.01
0.50
0.23
0.13
4 PLCS
NOTES:
1 Shaded Pin is Lead 1.
2 Dimension applies to plated terminal: to be measured between 0.02 mm
and 0.25 mm from terminal end.
3 Pin 1 identifier must exist on top surface of package by identification
mark or feature on the package body. Exact shape and size is optional.
4 Package Warpage: 0.05 mm max.
5 Die Thickness Allowable: 0.305 mm max.
Package Style: LCC, 28-Pin, 5x5
Features
• Complete Dual-Band Receiver Front-End
• Stepped LNA Gain Control
• Integrated LO Frequency Doubler
• Integrated LO Output Buffers
• Meets IS136 Specifications
Ordering Information
RF2475
RF2475 PCBA
Dual-Band Low Noise Amplifier/Mixer with Fre-
quency Doubler
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
8
Rev A2 010918
8-89


RF2475 데이터시트, 핀배열, 회로
RF2475
Preliminary
Absolute Maximum Ratings
Parameter
Supply Voltage
Input LO and RF Levels
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +5.0
+6
-30 to +85
-40 to +150
Unit
VDC
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Cellular Receive Path
Operational Limits
RF Frequency
LO Frequency
IF Frequency
LNA Input Level
LO Input Level
Supply Voltage
869
950
100
-10
2.7
Cellular Cascaded
Electrical Specifications
Gain
23
8 Gain Step
14
Gain Variations versus Tempera-
ture
Noise Figure
Input Third Order Intercept1
Return Loss
Isolation
-10
-2.0
10
10
10
10
60
60
IF Output Impedance
Supply Current
TX LO Buffer
894 MHz
1045
MHz
150 MHz
+10 dBm
-7 -4 dBm
2.8 3.3 V
TAMB=25°C, VCC=2.8V, fRF=881MHz,
fLO=1016MHz, fIF=135MHz,
LO Level=-7dBm, Image Filter I.L.=3dB
25 27 dB High Gain, Gain Select=High
8 dB Low Gain, Gain Select=Low
17 dB
+1.5
dB -30°C to +85°C
2.2 2.6 dB High Gain, Gain Select=High
15 20 dB Low Gain, Gain Select=Low
-9
dBm
High Gain, Gain Select=High
-0.5
dBm
Low Gain, Gain Select=Low
dB LNA Input - External Match
dB LNA Output - External Match
dB Mixer RF Input - External Match
dB Mixer LO Input - External Match
dB LO IN to LNA IN, Gain Select=High2
dB LO IN to LNA IN, Gain Select=Low
60 dB Image Rejection3
50 dB LO IN to IF OUT
50 dB Mixer RF IN to IF OUT
35 dB Mixer RF IN to TX LO OUT
>10 kMixer “ON”
20 25 mA Not including TX LO buffer
LO Output Buffer
-7 -4
dBm
LO Input Level=-7dBm
Harmonic Output
-22 -25
dBc LO Input Level=-7dBm
Isolation - LO OUT to LO IN
25
dB TX LO Buffer ON
Supply Current
7.5 9.0 mA
Logic
Input Low
0.5 V VCC=2.7V to 2.9V
Input High
2.0
V VCC=2.7V to 2.9V
Input Current
TBD
µA
Input Impedance
NOTES:
TBD
k
1 LNA input IP3 response to out of band frequencies (824Hz to 849MHz) should be -6dBm in high gain mode.
2 LO IN to LNA IN isolation specification with the 900MHz TX LO buffer on.
3 Image rejection measured with fRF=869MHz, PRF= -105 dBm, fLO=1004MHz; PIMAGE=-85 dBm, fIMAGE=1139MHz
8-90
Rev A2 010918




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