파트넘버.co.kr RF2469 데이터시트 PDF


RF2469 반도체 회로 부품 판매점

W-CDMA AND PCS LOW NOISE AMPLIFIER/MIXER DOWNCONVERTER



RF Micro Devices 로고
RF Micro Devices
RF2469 데이터시트, 핀배열, 회로
Preliminary
8
Typical Applications
• W-CDMA Handsets
• PCS Handsets
• General Purpose Downconverter
RF2469
W-CDMA AND PCS LOW NOISE
AMPLIFIER/MIXER DOWNCONVERTER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
Product Description
The RF2469 is a receiver front-end designed for the
receive section of W-CDMA and PCS applications. It is
designed to amplify and downconvert RF signals while
providing 23dB of stepped gain control range and fea-
tures digital control of the LNA gain and mixer gain. A fur-
ther feature of the chip is adjustable IIP3 of the LNA and
mixer using an off-chip current setting resistor. Noise Fig-
ure, IP3, and other specs are designed to be compatible
with W-CDMA and PCS communications. The IC is man-
ufactured on an advanced Gallium Arsenide Heterojunc-
tion Bipolar Transistor (GaAs HBT) process and
packaged in a 20-pin, leadless chip carrier with an
exposed die flag.
1.00
0.90
0.60
0.24 typ
3 0.20
4.00
sq.
0.65
0.30
4 PLCS
2.10
sq.
12°
MAX
0.75
0.50
0.05
0.50
Dimensions in mm.
NOTES:
1 Shaded lead is Pin 1.
Note orientation of package.
2 Pin 1 identifier must exist on top surface of package by identification
mark or feature on the package body. Exact shape and size is optional.
3 Dimension applies to plated terminal: to be measured between 0.02 mm
and 0.25 mm from terminal end.
4 Package Warpage: 0.05 mm max.
5 Die Thickness Allowable: 0.305 mm max.
0.23
0.13
4 PLCS
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
20 19 18 17 16
LNA1 OUT 1
15 LNA1 BYP
GND 2
VCC1 3
Logic
Control
14
LNA2
BYP
13 GND
VCC1 4
12 VCC1
LNA2 IN 5
11 LO IN
6 7 8 9 10
Functional Block Diagram
Package Style: LCC, 20-Pin, 4x4
Features
• Complete Receiver Front-End
• Stepped LNA/Mixer Gain Control
• Adjustable LNA/Mixer Bias Current
• 23dB Maximum Cascade Gain
• 2.5dB Noise Figure at Maximum
Cascade Gain
Ordering Information
RF2469
RF2469 PCBA
W-CDMA and PCS Low Noise Amplifier/Mixer Down-
converter
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
8
Rev A5 010717
8-33


RF2469 데이터시트, 핀배열, 회로
RF2469
Preliminary
Absolute Maximum Ratings
Parameter
Operating Ambient Temperature
Storage Temperature
Rating
-40 to +85
-40 to +150
Unit
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
RF Frequency Range
LO Frequency Range
IF Frequency Range
LNA 1
Gain
Noise Figure
Input IP3
Input VSWR
Output VSWR
P1dB
Current
8 LNA 1 Bypass
Gain
Noise Figure
Input IP3
Input VSWR
Output VSWR
Current
Local Oscillator Input
Input Level
LO to IF Isolation
Mixer/LNA2 BYP High
Gain
Noise Figure
Input IP3
Input IP2
Mixer/LNA2 BYP Low
Gain
Noise Figure
Input IP3
Input IP2
Specification
Min.
Typ.
Max.
2110 to 2170
2300 to 2360
190
9
+7.0
-5
+20.0
10
1.45
+10.0
<2:1
<2:1
-3
4.5
-2
2
+25.0
<2:1
<2:1
1.6
-10
+38
11
1.6
0
2.4
15
-7.0
+11.0
4
+2.0
+19.0
17
4.5
-3.0
+14.0
6
10.5
+4.0
+22.0
Unit
MHz
MHz
MHz
dB
dB
dBm
Condition
T=25°C, VCC=2.78V, RF=2140MHz,
LO=2330MHz @ -10dBm
1st LNA current setting resistor (R1) is
1.1k. 1st LNA current and IIP3 are adjust-
able via R1.
dB
mA
dB
dB
dBm
See LNA P1dB Compression Point section.
mA
dBm
dB
dB
dB
dBm
dBm
dB
dB
dBm
dBm
Single-ended.
Optimum LO Drive -10dBm to -5dBm.
T=25°C, VCC=2.78V, RF=2140MHz,
LO=2330MHz@-10dBm, LNA2BYP=1,
EN = 1
LNA 2 current setting resistor (R2) is 2.4k
LNA 2 current and IIP3 are adjustable via R2
T=25°C, VCC=2.78V, RF=2140MHz,
LNA2BYP=0, EN=1
LNA 2 current setting resistor (R2) is 2.4k
LNA 2 current and IIP3 are adjustable via R2
8-34
Rev A5 010717




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RF2469 amplifier

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