파트넘버.co.kr RF2371 데이터시트 PDF


RF2371 반도체 회로 부품 판매점

3V LOW NOISE AMPLIFIER



RF Micro Devices 로고
RF Micro Devices
RF2371 데이터시트, 핀배열, 회로
Preliminary
4
RF2371
3V LOW NOISE AMPLIFIER
Typical Applications
• GSM Handsets
• CDMA Handsets
• TDMA Handsets
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Oscillator Loop Amplifiers
Product Description
The RF2371 is a general purpose, low-cost, high perfor-
mance low noise amplifier designed for operation from a
2.7V to 4V supply with low current consumption. The
attenuation of the device is controlled when in power
down mode, providing a known gain step. The RF2371 is
available in a small industry-standard SOT23-8 surface
mount package, enabling compact designs which con-
serve board space. The design features a highly accurate
PTAT (Proportional To Absolute Temperature) biasing
scheme using bandgap cells.
1.59
1.61
0.365
0.15
0.05
2.80
3.00
0.650
2.60
3.00
1.44
1.04
*When Pin 1 is in
upper left, text
reads downward
(as shown).
3°MAX
0°MIN
0.35
0.55
0.127
Optimum Technology Matching® Applied
Si BJT
üSi Bi-CMOS
GaAs HBT
SiGe HBT
GaAs MESFET
Si CMOS
RF IN 1
GND1 2
GND2 3
IPSET 4
Bias Circuits
8 RF OUT
7 ISET
6 VCC
5 ENABLE
Package Style: SOT23-8
Features
• 700MHz to 2000MHz Operation
• 2.7V to 3.6V Single Supply
• +5dBm Input IP3 at 3.0mA
• 12dB Gain at 1950MHz
• 1.8dB Noise Figure at 1950MHz
• 17dB Gain Step
Ordering Information
RF2371
3V Low Noise Amplifier
RF2371 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4
Rev A2 010205
4-221


RF2371 데이터시트, 핀배열, 회로
RF2371
Preliminary
Absolute Maximum Ratings
Parameter
Supply Voltage
Supply Current
Operating Ambient Temperature
Storage Temperature
Rating
4.0
20
-40 to +85
-40 to +150
Unit
V
mA
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
4 Overall
Frequency Range
LNA Performance
700 to 2000
MHz
T =27° C, VCC=2.7V, VISELECT =0V,
VENABLE= 2.7 V
Freq = 1.95 GHz
Gain
Noise Figure
Input IP3
Input P1dB
Input VSWR
Output VSWR
Off Mode Gain
Gain
Noise Figure
Input IP3
Current Control
10.5
+4
12.5
1.6
+6
-14
5:1
-5.0
17
1.6
0
1.5:1
dB
dB
dBm
dBm
dB
dB
dB
dB
dB
dBm
At 2.9mA
(Noise match)
VENABLE= 0 V
Freq = 836 MHz
Internal Current Setting “ON”
External Current Setting “ON”
Current into ISELECT
Power Control
CMOS Low
CMOS High
1
V Voltage on ISELECT
V Voltage on ISELECT
µA VISELECT=2.7 V
Power “ON” Voltage
Power “OFF” Voltage
Current into ENABLE
Power Supply
CMOS High
CMOS Low
1
V Voltage on ENABLE
V Voltage on ENABLE
µA VENABLE=2.7V
Operating Voltage
Operating Current
Leakage Current
2.7 to 3.6
2.9
5
1
V
mA VCC=2.7V, Internal current setting
µA VENABLE=0 V
4-222
Rev A2 010205




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