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RF Micro Devices |
Preliminary
4
RF2368
DCS/PCS 2.7V LOW NOISE AMPLIFIER
Typical Applications
• DCS Handsets
• PCS Handsets
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
The RF2368 is a DCS/PCS low noise amplifier with
bypass switch designed for use as a front-end for
DCS1800/PCS1900 applications. The LNA is a two-stage
amplifier with bypass switch. This amplifier has low noise
figure and high linearity in both high gain and bypass/low
gain mode.
1.59
1.61
2.80
3.00
2.60
3.00
*When Pin 1 is in upper
left, text reads downward
(as shown).
0.365
0.15
0.05
0.650
3°MAX
0°MIN
1.44
1.04
0.127
0.35
0.55
4
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
BIAS 1
GND 2
IN 3
GND1 4
Control Logic
8 SELECT
7 OUT
6 GND2
5 VCC
Functional Block Diagram
Package Style: SOT 8 Lead
Features
• Low Noise and High Intercept Point
• Power Down Control
• Switchable Gain
Ordering Information
RF2368
DCS/PCS 2.7V Low Noise Amplifier
RF2368 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A0 010503
4-199
RF2368
Preliminary
Absolute Maximum Ratings
Parameter
Supply Voltage
Input RF Level
Storage Temperature
Rating
-0.5 to +6.0
+10
-40 to +150
Unit
VDC
dBm
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Operating Range
Overall Frequency Range
4 Supply Voltage (VCC)
1800
2.7
2.78
2000
2.86
MHz
V
VCC1, VCC2
Power Down Voltage (VBIAS)
2.7
2.78
2.86
V BIAS
Logic Control Voltage Level
0
2.86
V SELECT
Operating Ambient Temperature
-40
+85 °C
Input Impedance
50 Ω
Output Impedance
50 Ω
1850MHz Performance
High Gain Mode
T = 25°C, RF=1850MHz, VCC=BIAS=2.78V,
SELECT=0V, ZIN=ZO=50Ω
Gain
17 18 19 dB
Gain Variation Over
+0.5
dB
Temperature Range
Gain Variation Over
+0.5
dB
Frequency Band
Current Consumption
9.0 9.5 mA ICC+IBIAS
Noise Figure
1.6 1.7 dB
Reverse Isolation
15 20
dB
Input IP3
0.0 +1.0
dBm
Input P1dB
-13 -10
dB
1850MHz Performance
Bypass Mode
T = 25°C, RF=1850MHz, VCC =2.78V,
SELECT=2.7V, ZIN=ZO=50Ω
Gain
-4.5 dB
Gain Reduction
21 22.5 24 dBc
Power Down Current
10 µA
Input IP3
12 15.0
dBm
Input P1dB
+5 +8
dB
1960MHz Performance -
High Gain Mode
T = 25°C, RF=1960MHz, VCC=BIAS=2.78V,
SELECT=0V, ZIN=ZO=50Ω
Gain
15.5
16.5
17.5
dB
Gain Variation Over
+0.5
dB
Temperature Range
Gain Variation Over
+0.5
dB
Frequency Band
Current Consumption
9.0 9.5 mA ICC+IBIAS
Noise Figure
1.6 1.7 dB
Reverse Isolation
15 20
dB
Input IP3
+1 +2
dBm
Input P1dB
-13 -10
dB
1960MHz Performance -
Bypass Mode
T = 25°C, RF=1960MHz, VCC =2.78V,
SELECT=2.7V, ZIN=ZO=50Ω
Gain
Gain Reduction
Power Down Current
Input IP3
Input P1dB
20
14.0
+5
-5
21.5
17.0
+8
dB
23 dBc
10 µA
dBm
dB
4-200
Rev A0 010503
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