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RF2366PCBA-PCS 반도체 회로 부품 판매점

3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER



RF Micro Devices 로고
RF Micro Devices
RF2366PCBA-PCS 데이터시트, 핀배열, 회로
4
Typical Applications
• CDMA PCS Bypass LNA
• CDMA PCS Bypass Driver
Amplifier
RF2366
3V LOW NOISE AMPLIFIER/
3V PA DRIVER AMPLIFIER
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
The RF2366 is a switchable low noise amplifier with a
very high dynamic range designed for digital cellular
applications. The device functions as an outstanding front
end low noise amplifier. When used as an LNA, the bias
current can be set externally. When used as a PA driver,
the IC can operate directly from a single cell Li-ion battery
and includes a power down feature that can be used to
completely turn off the device. The IC is featured in a
standard SOT 6-lead plastic package.
1.80
1.40
1.90
0.50
0.35
3.10
2.70
0.10 MAX.
3.00
2.60
0.90
0.70
1.30
1.00
0.25
9° 0.10
0.37 MIN.
All dimensions in mm.
*When Pin 1 is in
upper left, text
reads downward
(as shown).
4
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VREF/PD 1
GND1 2
RF IN 3
Logic
Control
6 SELECT
5 GND2
4 RF OUT
Functional Block Diagram
Rev A6 010816
Package Style: SOT 6-Lead
Features
• Low Noise and High Intercept Point
• Adjustable Bias Current
• Power Down Control
• Single 2.5V to 6.0V Power Supply
• 1000MHz to 2500MHz Operation
• Meets IS-98B Single-Tone and IMD
Ordering Information
RF2366
3V Low Noise Amplifier/ 3V PA Driver Amplifier)
RF2366 PCBA-PCS Fully Assembled Evaluation Board (LNA)
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-183


RF2366PCBA-PCS 데이터시트, 핀배열, 회로
RF2366
Absolute Maximum Ratings
Parameter
Supply Voltage
Input RF Level
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +8.0
+10
-40 to +85
-40 to +150
Unit
VDC
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Overall
4 PCS Low Noise Amplifier
Frequency Range
1930 to 1990
HIGH GAIN MODE
Gain
10 12.5
Noise Figure
1.4 1.8
IIP3 9 14
Current Drain
6.5
Input VSWR
1.8:1
Output VSWR
1.6:1
BYPASS MODE
Gain
-4.0 -2.5
IIP3 18.5
Input VSWR
1.8:1
3:1
Output VSWR
1.8:1
2.5:1
Current Drain
PCS CDMA Driver
0.85
MHz
dB
dB
dBm
mA
TAMB=25°C, VCC=3.0V
RF=1930MHz to 1990MHz
Gain Select<0.8V, VPD/VREF=3V
dB
dBm
Gain Select>1.8V, VPD/VREF=0V
mA
RF=1850MHz to 1910MHz
Frequency
HIGH GAIN MODE
Gain
Noise Figure
Output Power
ACPR1
Input VSWR
Output VSWR
Current Drain
BYPASS MODE
Gain
IIP3
Input VSWR
Output VSWR
Current Drain
Power Supply
1850 to 1910
12
1.6
4
-60
1.9:1
1.6:1
6.5
-3
17
2:1
1.5:1
0.85
MHz
dB
dB
dBm
dBc/30 kHz
Gain Select<0.8V, VPD/VREF=3V
POUT=+4dBm, +1.25MHz offset
mA
dB
dBm
Gain Select>1.8V, VPD/VREF=0V
mA
Voltage (VCC)
VSELECT Low
VSELECT High
Power Down
3V
0.8 V High Gain mode.
Select<0.8V, VPD/VREF=3V
1.8 V Low Gain mode.
Select>1.8V, VPD/VREF=0V
10 µA Gain Select<0.8V, VPD/VREF=0V, VCC=0V
4-184
Rev A6 010816




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RF2366PCBA-PCS

3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER - RF Micro Devices