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RF2363 반도체 회로 부품 판매점

DUAL-BAND 3V LOW NOISE AMPLIFIER



RF Micro Devices 로고
RF Micro Devices
RF2363 데이터시트, 핀배열, 회로
Preliminary
4
RF2363
DUAL-BAND 3V LOW NOISE AMPLIFIER
Typical Applications
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
The RF2363 is a dual-band Low Noise Amplifier
designed for use as a front-end for 950MHz GSM/
1850MHz DCS applications and may be used for dual-
band cellular/PCS applications. The 900MHz LNA is a
single-stage amplifier; the 1900MHz LNA is a 2-stage
amplifier. The part may also be tuned for applications in
other frequency bands. The device has an excellent com-
bination of low noise figure and high linearity at a very low
supply current. It is packaged in a very small industry
standard SOT 8-lead plastic package.
1.59
1.61
0.15
0.05
0.365
2.80
3.00
2.60
3.00
*When Pin 1 is in upper
left, text reads downward
(as shown).
0.650
3°MAX
0°MIN
1.44
1.04
0.35
0.55
0.127
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
RF OUT1 1
GND 2
RF OUT2 3
EN1 4
8 RF IN1
7 GND
6 RF IN2
5 EN2
Package Style: SOT, 8-Lead
Features
• Low Noise and High Intercept Point
• 18dB Gain at 900MHz
• 21dB Gain at 1900MHz
• Low Supply Current
• Single 2.5V to 5.0V Power Supply
• Very Small SOT-23-8 Plastic Package
Ordering Information
RF2363
Dual-Band 3V Low Noise Amplifier
RF2363 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4
Rev B2 010129
4-199


RF2363 데이터시트, 핀배열, 회로
RF2363
Preliminary
Absolute Maximum Ratings
Parameter
Supply Voltage
Input RF Level
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +6.0
+10
-40 to +85
-40 to +150
Unit
VDC
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
4 RF Frequency Range
950MHz Performance
Gain
Isolation
Gain Step
Noise Figure
Output IP3
Input P1dB
Reverse Isolation
Input VSWR
Output VSWR
1850MHz Performance
Gain
Isolation
Gain Step
Noise Figure
Output IP3
Input P1dB
Reverse Isolation
Input VSWR
Output VSWR
LNA Select
“Enable” Voltage
“Disable” Voltage
Power Supply
Voltage
Current Consumption
Specification
Min.
Typ.
Max.
800 to 1000
1800 to 2000
16 18 20
16
34
1.3
+17 +24
-10
20
1.8:1
2:1
1.8:1
2:1
20 21.5 24
10
31.5
1.4
+16 +22
-12
30
1.7:1
2:1
1.7:1
2:1
VCC
0
2.8
2.5 to 5.0
5
7.5
1
Unit Condition
MHz
MHz
dB
dB
dB
dB
dBm
dBm
dB
dB
dB
dB
dB
dBm
dBm
dB
V
V
V
V
mA
mA
µA
T = 25°C, RF=950MHz, VCC=2.8V,
EN1=2.8V, EN2=0V
EN1 = 0 V
Gain - Isolation
No external matching
With external match as per GSM/DCS Appli-
cation Schematic
T = 25°C, RF=1850MHz, VCC=2.8V,
EN2=2.8V, EN1=0V
EN2 = 0 V
Gain - Isolation
No external matching
With external match as per GSM/DCS Appli-
cation Schematic
T = 25 °C
Specifications
Operating limits
900MHz LNA Enabled, 1900MHz LNA Dis-
abled; total DC current
1900MHz LNA Enabled, 900MHz LNA Dis-
abled; total DC current
EN1 = EN2 = 0 V
4-200
Rev B2 010129




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