XIT1700 반도체 회로 부품 판매점

P-Channel Enhancement Mode MOSFET General Purpose Amplifier



Calogic  LLC 로고
Calogic LLC
XIT1700 데이터시트, 핀배열, 회로
P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
IT1700
CORPORATION
FEATURES
Low ON-Resistance
High Gain
Low Noise Voltage
High Input Impedance
•• Low Leakage
PIN CONFIGURATION
TO-72
1503
C
G
S
D
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
Drain-Source and Gate-Source Voltage . . . . . . . . . . . . . -40V
Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package
IT1700 Hermetic TO-72
XIT1700 Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC

XIT1700 데이터시트, 핀배열, 회로
CORPORATION
IT1700
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
BVDSS
PARAMETER
Drain to Source Breakdown Voltage
MIN MAX UNITS
TEST CONDITIONS
-40 V VGS = 0, ID = -10µA
BVSDS
Source to Drain Breakdown Voltage
-40 V VGS = 0, ID = -10µA
IGSS Gate Leakage Current
(See note 2)
IDSS
IDSS (150oC)
Drain to Source Leakage Current
Drain to Source Leakage Current
ISDS
ISDS (150oC)
Source to Drain Leakage Current
Source to Drain Leakage Current
VGS(th)
Gate Threshold Voltage
200 pA
0.4 µA VGS = 0, VDS = -20V
400 pA
0.8 µA
-2 -5
V VGS = VDS, ID = -10µA
rDS(on)
Static Drain to Source "on" Resistance
400 ohms VGS = -10V, VDS = 0
IDS(on)
Drain to Source "on" Current
2 mA VGS = -10V, VDS = -15V
gfs Forward Transconductance Common Source
2000 4000 µS VDS = -15V, ID = -10mA, f = 1kHz
Ciss
Small Signal, Short Circuit, Common Source,
Input Capacitance
5
pF
VDS = -15V, ID = -10mA
f = 1MHz (Note 3)
Crss
Small Signal, Short Circuit, Common Source,
Reverse Transfer Capacitance
1.2
pF
VDG = -15V, ID = 0
f = 1MHz (Note 3)
Coss
Small Signal, Short Circuit, Common Source,
Output Capacitance
3.5
pF
VDS = -15V, ID = -10mA
f = 1MHz (Note 3)
NOTES: 1. Device must not be tested at ±125V more than once nor longer than 300ms.
2. Actual gate current is immeasurable. Package suppliers are required to guarantee a package leakage of < 10pA.
External package leakage is the dominant mode which is sensitive to both transient and storage environment, which cannot be guaranteed.
3. For design reference only, not 100% tested.




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XIT1700 amplifier

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XIT1700

P-Channel Enhancement Mode MOSFET General Purpose Amplifier - Calogic LLC