J210 반도체 회로 부품 판매점
LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER
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 Linear Integrated Systems |
Linear Integrated Systems
J210, J211, J212
LOW NOISE N-CHANNEL J-FET
GENERAL PURPOSE AMPLIFIER
FEATURES
HIGH GAIN gfs = 7000µmho MINIMUM (J211, J212)
HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM
LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Gate-Drain or Gate-Source Voltage
Gate Current
Total Device Dissipation @ 25°C Ambient
(Derate 3.27 mW/°C)
Operating Temperature Range
-25V
10mA
360mW
-55°C to + 135°C
TO-92
Plastic
TO-92
D
G
S
G
S
D
Bottom View
DS G
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS
J210
J211
J212
UNITS CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
IGSS
VGS(off)
BVGSS
IDSS
IG
gfs
Gate Reverse Current
-- --
Gate-Source Cutoff Voltage
-1 --
Gate-Source Breakdown Voltage -25 --
Drain Saturation Current
2 --
Gate Current
-- -10
Common-Source Forward
Transconductance
4,000 --
-100 -- --
-3 -2.5 --
-- -25 --
15 7 --
-- -- -10
12,000 6,000 --
-100 -- --
-4.5 -4 --
-- -25 --
20 15 --
-- -- -10
12,000 7,000 --
-100
-6
--
40
--
12,000
pA
V
mA
pA
µmho
VDS=0
VDS=15V
VDS=0
VDS=15V
VDS=10V
VGS= -15V (NOTE 1)
ID=1nA
IG= -1µA
VGS=0 (NOTE 2)
ID=1mA (NOTE 1)
f=1kHz
gos Common-Source Output
Conductance
-- -- 150 -- -- 200 -- -- 200
Ciss Common-Source Input
-- 4 --
-- 4
--
-- 4 --
VDS=15V VGS=0 f=1MHz
Capacitance
pF
Crss
Common-Source Reverse
-- 1 --
-- 1
--
-- 1 --
Transfer Capacitance
en
Equivalent Short-Circuit Input -- 10 --
-- 10 --
-- 10 -- nV√Hz
Noise Voltage
f=1kHz
NOTE 1: Approximately doubles for every 10°C increase in TA.
NOTE 2: Pulse test duration = 2ms.
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
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제조업체: Linear Integrated Systems
( lis )
J210 amplifier
데이터시트 다운로드 :
[ J210.PDF ]
[ J210 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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