파트넘버.co.kr KSE180 데이터시트 PDF


KSE180 반도체 회로 부품 판매점

Low Power Audio Amplifier Low Current High Speed Switching Applications



Fairchild Semiconductor 로고
Fairchild Semiconductor
KSE180 데이터시트, 핀배열, 회로
KSE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
NPN Epitaxial Silicon Transistor
1 TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: KSE180
: KSE181
: KSE182
Value
60
80
100
VCEO
Collector-Emitter Voltage : KSE180
: KSE181
: KSE182
40
60
80
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
7
3
6
1
1.5
12.5
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector -Emitter Breakdown Voltage
: KSE180
: KSE181
: KSE182
Test Condition
IC = 10mA, IB = 0
Min.
40
60
80
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
Collector Cut-off Current : KSE180
: KSE181
: KSE182
: KSE180
: KSE181
: KSE182
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
VCB = 60V, IB = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCB = 60V, IE = 0 @ TC = 150°C
VCB = 80V, IE = 0 @ TC = 150°C
VCB = 100V, IE = 0 @ TC = 150°C
VBE = 7V, IC = 0
VCE = 1V, IC = 100mA
VCE = 1V, IC = 500mA
VCE = 1V, IC = 1.5A
IC = 500mA, IB = 50mA
IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA
IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA
VCE = 1V, IC = 500mA
VCE = 10V, IC = 100mA
VCB = 10V, IE = 0, f = 0.1MHz
50
30
12
50
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
V
0.1 µA
0.1 µA
0.1 µA
0.1 mA
0.1 mA
0.1 mA
0.1 µA
250
0.3 V
0.9 V
1.7 V
1.5 V
2.0 V
1.2 V
MHz
30 pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001


KSE180 데이터시트, 핀배열, 회로
Typical Characteristics
5
IB=200mA
I = 180mA
B
4 IB = 160mA
I = 140mA
B
IB = 120mA
IB = 100mA
3 IB = 80mA
IB = 60mA
I = 40mA
B
2 I = 20mA
B
1
0
0 1 2 3 4 5 6 7 8 9 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
1 VBE(sat)
0.1 VCE(sat)
IC = 10IB
0.01
0.01
0.1 1
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
ICMAX.(Pulse)
IC MAX.(DC)
500µs
5ms
1 Dissipation Limited
0.1
0.01
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
1000
100 VCE = 5V
VCE=1V
10
1
10 100 1000
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10000
1000
100
f=0.1MHZ
IE=0
10
1
0.1 1
10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, January 2001




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Fairchild Semiconductor

( fairchild )

KSE180 amplifier

데이터시트 다운로드
:

[ KSE180.PDF ]

[ KSE180 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


KSE180

Low Power Audio Amplifier Low Current High Speed Switching Applications - Fairchild Semiconductor



KSE181

Low Power Audio Amplifier Low Current High Speed Switching Applications - Fairchild Semiconductor



KSE182

Low Power Audio Amplifier Low Current High Speed Switching Applications - Fairchild Semiconductor