KSB772 반도체 회로 부품 판매점
Audio Frequency Power Amplifier
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 Fairchild Semiconductor |
KSB772
Audio Frequency Power Amplifier
• Low Speed Switching
• Complement to KSD882
1 TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current (DC)
PC Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Rθja Junction to Ambient
Rθjc Junction to Case
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle≤50%
Value
- 40
- 30
-5
-3
-7
- 0.6
10
1
132
13.5
150
- 55 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PW≤350µs, Duty Cycle≤2%
VCB = - 30V, IE = 0
VEB = - 3V, IC = 0
VCE = - 2V, IC = - 20mA
VCE = - 2V, IC = - 1A
IC = - 2A, IB = - 0.2A
IC = - 2A, IB = - 0.2A
VCE = - 5V, IE = - 0.1A
VCB = - 10V, IE = 0
f = 1MHz
Min.
30
60
Typ.
220
160
- 0.3
- 1.0
80
55
hFE Classificntion
Classification
hFE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
Units
V
V
V
A
A
A
W
W
°C/W
°C/W
°C
°C
Max.
-1
-1
Units
µA
µA
400
- 0.5
- 2.0
V
V
MHz
pF
G
200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. B, October 2002
Typical Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
0
IB = -10mA
IB = -9mA
IB = -8mA
IB = -7mA
IB = -6mA
I = -5mA
B
IB = -4mA
I = -3mA
B
IB = -2mA
I = -1mA
B
-4 -8 -12 -16 -20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10000
-1000
-100
VBE(sat)
IC = 10· I B
-10
VCE(sat)
-1
-1
-10
-100
-1000
-10000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
VCE=5V
10
1
-0.01
-0.1
-1
IC[A], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
1000
100
VCE = -2V
10
1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
-10000
1000
100
I =0
E
f=1MHz
10
1
-1 -10 -100
V [V], COLLECTOR-BASE VOLTAGE
CB
Figure 4. Collector Output Capacitance
-10
IC MAX(Pulse)
IC MAX(DC)
-1
10ms 1ms
LDimisitseipdation
s/b Limited
-0.1
-0.01
-1
-10
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 6. Safe Operating Area
-100
Rev. B, October 2002
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KSB772 amplifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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