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Fairchild Semiconductor |
KSB601
Low Frequency Power Amplifier
• Medium Speed Switching Industrial Use
• Complement to KSD560
1 TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current
PC Collector Dissipation (Ta=25°C)
PC Collector Dissipation (TC=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle≤50%
- 100
- 100
-7
-5
-8
- 0.5
1.5
30
150
- 55 ~ 150
V
V
V
A
A
A
W
W
°C
°C
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage IC = - 3A, IB1 = - 3mA,
L = 1mH
VCEX(sus)1
Collector-Emitter Sustaining Voltage
IC = - 3A, IB1 = - IB2 = - 3mA
VBE(off) = 5V, L =180µH
Clamped
VCEX(sus)2
Collector-Emitter Sustaining Voltage
IC = - 6A, IB1 = - 12mA
IB2 = 3mA, VBE(off) = 5V
L = 180uH, Clamped
ICBO
ICER
Collector Cut-off Current
Collector Cut-off Current
ICEX1
ICEX2
Collector Cut-off Current
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
*DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
tON Turn ON Time
tS Storage
tF Fall time
* Pulse Test: PW≤350µs, Duty Cycle≤2%
VCB = - 100V, IE = 0
VCE = - 100V, RBE = 51Ω
TC= 125°C
VCE = - 100V, VBE(off) = 1.5V
VCE = - 100V, VBE(off) = 1.5V
TC = 125°C
VEB = - 5V, IC = 0
VCE = - 2V, IC = - 3A
VCE = - 2V, IC = - 5A
IC = - 3A, IB = - 3mA
IC = - 3A, IB = - 3mA
VCC = - 50V , IC = - 3A
IB1 = - IB2 = - 3mA
RL = 17Ω
Min.
-
100
-
100
-
100
2000
500
Typ. Max.
- 10
-1
- 10
-1
-3
15000
- 1.5
-2
0.5
1
1
Units
V
V
V
µA
mA
µA
mA
mA
V
V
µs
µs
µs
hFE Classification
Classification
hFE1
R
2000 ~ 5000
O
3000 ~ 7000
Y
5000 ~ 15000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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