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FMBA56 반도체 회로 부품 판매점

PNP Multi-Chip General Purpose Amplifier



Fairchild Semiconductor 로고
Fairchild Semiconductor
FMBA56 데이터시트, 핀배열, 회로
Discrete POWER & Signal
Technologies
FMBA56
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT-6
Mark: .2G
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
80
VEBO
Emitter-Base Voltage
4.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
FMBA56
700
5.6
180
Units
mW
mW/°C
°C/W
© 1998 Fairchild Semiconductor Corporation


FMBA56 데이터시트, 핀배열, 회로
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICEO Collector-Cutoff Current
ICBO Collector-Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCE = 60 V, IB = 0
VCB = 80 V, IE = 0
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
IC = 100 mA, VCE = 1.0 V
80
80
4.0
100
100
V
V
V
0.1 µA
0.1 µA
0.25 V
1.2 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 100 mA, VCE = 1.0 V,
f = 100 MHz
125 MHz
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
300
VCE = 1V
250
125 °C
200
150 25 °C
100 - 40 ºC
50
0.001
0.01 0.1
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
0.6
0.4
0.2
0
10
- 40 ºC
25 °C
125 °C
100
I C - COLLECTOR CURRENT (mA)




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FMBA56 amplifier

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FMBA56

PNP Multi-Chip General Purpose Amplifier - Fairchild Semiconductor