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Fairchild Semiconductor |
FMB5551
NPN General Purpose Amplifier
SuperSOT-6 Surface Mount Package
• This device is designed for general purpose high voltage amplifiers
and gas discharge display driving.
• Sourced from process 16.
• See MMBT5551 for characteristics.
C2
E1
C1
B2
E2
B1 SuperSOT-6
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
PC Collector Dissipation (Ta=25°C) *
TJ Junction Temperature
TSTG
Storage Temperature Range
RθJA
Thermal Resistance, Junction to Ambient
* Pd total, for both transistors. For each transistor, Pd = 350mW.
Value
160
180
6
600
0.7
150
- 55 ~ 150
180
Units
V
V
V
mA
W
°C
°C
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
BVCEO
BVCBO
BVEBO
ICBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
IEBO
Emitter Cut-off Current
On Characteristics
IC = 1mA
IC = 10µA
IE = 10µA
VCB = 120V
VCB = 120V, T = 100°C
VEB = 4V
160
180
6
V
V
V
50 nA
50 µA
50 nA
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
VCE = 5V, IC = 1mA
VCE = 5V, IC = 10mA
VCE = 5V, IC = 50mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
80
80 250
30
0.15 V
0.2
1V
1
TYPICAL
Cob Output Capacitance
VCB = 10V, f = 1MHz
Cib Input Capacitance
VCB = 0.5V, f = 1MHz
fT
Current gain Bandwidth Product
VCE = 10V, IC = 10mA
f = 100MHz
6 pF
20 pF
100 300 MHz
NF Noise Figure
hFE Small Signal Current Gain
VCE = 5V, IC = 200µA
f = 1MHz, RS = 2kΩ, B = 200Hz
VCE = 10V, IC = 1mA
f = 1KHz
50
8 dB
250
©2002 Fairchild Semiconductor Corporation
Rev. A, January 2002
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H4
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