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PDF AA026P2-00 Data sheet ( Hoja de datos )
| Número de pieza | AA026P2-00 | |
| Descripción | 23.5-26.5 GHz GaAs MMIC Power Amplifier | |
| Fabricantes | Alpha Industries | |
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23.5–26.5 GHz GaAs MMIC
Power Amplifier
Features
I Single Bias Supply Operation (6 V)
I 17 dB Typical Small Signal Gain
I 24 dBm Typical P1 dB Output Power
at 26.5 GHz
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD
MT 2010
Chip Outline
3.080
2.960
2.068
AA026P2-00
1.014
Description
Alpha’s three-stage balanced K band GaAs MMIC power
amplifier has a typical P1 dB of 24 dBm and a typical PSAT
of 26 dBm at 26.5 GHz. The chip uses Alpha’s proven
0.25 µm MESFET technology, and is based upon MBE
layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate a conductive epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the commercial and military
areas where high power and gain are required.
0.130
0.000
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (TC)
Storage Temperature (TST)
Bias Voltage (VD)
Power In (PIN)
Junction Temperature (TJ)
Value
-55°C to +90°C
-65°C to +150°C
7 VDC
22 dBm
175°C
Electrical Specifications at 25°C (VDS = 6 V)
Parameter
Condition
Drain Current (at Saturation)
Small Signal Gain
F = 23.5–26.5 GHz
Input Return Loss
F = 23.5–26.5 GHz
Output Return Loss
F = 23.5–26.5 GHz
Output Power at 1 dB Gain Compression
F = 26.5 GHz
Saturated Output Power
F = 26.5 GHz
Gain at Saturation
Thermal Resistance1
F = 26.5 GHz
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Symbol
IDS
G
RLI
RLO
P1 dB
PSAT
GSAT
ΘJC
Min.
15
23
24
Typ.2
520
17
-17
-20
24
26
14
17
Max.
700
-10
-10
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet AA026P2-00.PDF ] | |
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