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Alpha Industries |
21–24 GHz GaAs MMIC
Low Noise Amplifier
Features
I Single Bias Supply Operation (4.5 V)
I 2.6 dB Typical Noise Figure at 23 GHz
I 19 dB Typical Small Signal Gain
I 0.25 µm Ti/Pd/Au Gates
I 100% On-Wafer RF, DC and Noise
Figure Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
1.250
1.172
0.493
0.087
0.000
AA022N1-00
1.162
0.124
0.087
Description
Alpha’s three-stage reactively-matched 21–24 GHz
MMIC low noise amplifier has typical small signal gain of
19 dB with a typical noise figure of 2.6 dB at 23 GHz.
The chip uses Alpha’s proven 0.25 µm low noise PHEMT
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process.
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (TC)
Storage Temperature (TST)
Bias Voltage (VD)
Power In (PIN)
Junction Temperature (TJ)
Value
-55°C to +90°C
-65°C to +150°C
6 VDC
10 dBm
175°C
Electrical Specifications at 25°C (VDS = 4.5 V)
Parameter
Condition
Drain Current
Small Signal Gain
F = 21–24 GHz
Noise Figure
F = 23 GHz
Input Return Loss
F = 21–24 GHz
Output Return Loss
Output Power at 1 dB Gain Compression1
Thermal Resistance2
F = 21–24 GHz
F = 23 GHz
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
Symbol
IDS
G
NF
RLI
RLO
P1 dB
ΘJC
Min.
16
Typ.3
35
19
2.6
-7
-14
8
92
Max.
50
2.8
-6
-10
Unit
mA
dB
dB
dB
dB
dBm
°C/W
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
1
21–24 GHz GaAs MMIC Low Noise Amplifier
AA022N1-00
Typical Performance Data
30
20 S21
10
0 S11
-10
-20 S22
-30
-40
S12
-50
-60
17 18 19 20 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
Typical Small Signal Performance
S-Parameters (VD = 4.5 V)
4.5 25
Gain* 2.5 V-5 V
24
4.0
Gain 3.5 V
23
3.5 NF 4.5 V
Gain 4.5 V
22
21
NF 3.5 V
3.0
NF* 2.5 V-5 V
20
19
18
2.5 17
16
2.0 15
17 18 19 20 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
Typical Gain and Noise Figure
Performance for Three Bias Conditions
*Special Bias: VD1 = 2.5 V, VD2 = 5.0 V
24 37
22 35
20 Gain
33
18 31
16 29
14 27
12 25
10 23
8 ID
6
21
19
4 NF
17
2 15
1.0 2.0 3.0 4.0 5.0 6.0
VD1 and VD2 (V)
Typical Gain and Noise Figure
Performance vs. Drain Bias (VD1 = VD2)
Bias Arrangement
VD2
.01 µF 50 pF
RF IN
RF OUT
.01 µF 50 pF
VD1
For biasing on, adjust VDS from zero to the desired value
(4.5 V recommended). For biasing off, reverse the biasing on procedure.
Circuit Schematic
D
G
Detail A
VD2
RF IN SEE
DETAIL
A
G
D
G
D
G
D
RF OUT
VD1
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
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