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PDF AD8009 Data sheet ( Hoja de datos )
| Número de pieza | AD8009 | |
| Descripción | Low Distortion Amplifier | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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a
1 GHz, 5,500 V/s
Low Distortion Amplifier
AD8009
FEATURES
Ultrahigh Speed
5,500 V/s Slew Rate, 4 V Step, G = +2
545 ps Rise Time, 2 V Step, G = +2
Large Signal Bandwidth
440 MHz, G = +2
320 MHz, G = +10
Small Signal Bandwidth (–3 dB)
1 GHz, G = +1
700 MHz, G = +2
Settling Time 10 ns to 0.1%, 2 V Step, G = +2
Low Distortion over Wide Bandwidth
SFDR
–66 dBc @ 20 MHz, Second Harmonic
–75 dBc @ 20 MHz, Third Harmonic
Third Order Intercept (3IP)
26 dBm @ 70 MHz, G = +10
Good Video Specifications
Gain Flatness 0.1 dB to 75 MHz
0.01% Differential Gain Error, RL = 150 ⍀
0.01؇ Differential Phase Error, RL = 150 ⍀
High Output Drive
175 mA Output Load Drive
10 dBm with –38 dBc SFDR @ 70 MHz, G = +10
Supply Operation
+5 V to ؎5 V Voltage Supply
14 mA (Typ) Supply Current
APPLICATIONS
Pulse Amplifier
IF/RF Gain Stage/Amplifiers
High Resolution Video Graphics
High Speed Instrumentations
CCD Imaging Amplifier
2
G = +2
1 RF = 301⍀
RL = 150⍀
0
–1
VO = 2V p-p
–2
–3
G = +10
RF = 200⍀
RL = 100⍀
–4
–5
–6
–7
–8
1 10 100 1000
FREQUENCY RESPONSE (MHz)
Figure 1. Large Signal Frequency Response; G = +2 and +10
REV. F
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FUNCTIONAL BLOCK DIAGRAMS
8-Lead Plastic SOIC (R-8)
5-Lead SOT-23 (RT-5)
NC 1
–IN 2
+IN 3
–VS 4
AD8009
8 NC
7 +VS
6 OUT
5 NC
NC = NO CONNECT
AD8009
VOUT 1
5 +VS
–VS 2
+IN 3
4 –IN
PRODUCT DESCRIPTION
The AD8009 is an ultrahigh speed current feedback amplifier
with a phenomenal 5,500 V/µs slew rate that results in a rise
time of 545 ps, making it ideal as a pulse amplifier.
The high slew rate reduces the effect of slew rate limiting and
results in the large signal bandwidth of 440 MHz required for
high resolution video graphic systems. Signal quality is main-
tained over a wide bandwidth with worst-case distortion of
–40 dBc @ 250 MHz (G = +10, 1 V p-p). For applications with
multitone signals, such as IF signal chains, the third order
intercept (3IP) of 12 dBm is achieved at the same frequency. This
distortion performance coupled with the current feedback
architecture make the AD8009 a flexible component for a gain
stage amplifier in IF/RF signal chains.
The AD8009 is capable of delivering over 175 mA of load current
and will drive four back terminated video loads while maintaining
low differential gain and phase error of 0.02% and 0.04°,
respectively. The high drive capability is also reflected in the
ability to deliver 10 dBm of output power @ 70 MHz with
–38 dBc SFDR.
The AD8009 is available in a small SOIC package and will
operate over the industrial temperature range –40°C to +85°C.
The AD8009 is also available in an SOT-23-5 and will operate
over the commercial temperature range of 0°C to 70°C.
–30
G=2
RF = 301⍀
–40 VO = 2V p-p
–50
SECOND
100⍀ LOAD
–60 SECOND
150⍀ LOAD
–70
THIRD
–80 100⍀ LOAD
–90 THIRD
150⍀ LOAD
–100
1
10
FREQUENCY RESPONSE (MHz)
70
Figure 2. Distortion vs. Frequency; G = +2
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved.
1 page  
AD8009
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 0.75 W
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . . ± VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 3.5 V
Output Short-Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range R Package . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Operating Temperature Range (J Grade) . . . . . . . 0°C to 70°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Lead SOIC Package: θJA = 155°C/W.
5-Lead SOT-23 Package: θJA = 240°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8009
is limited by the associated rise in junction temperature. The maxi-
mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately 150°C. Exceeding this limit temporarily may cause
a shift in parametric performance due to a change in the stresses
exerted on the die by the package. Exceeding a junction tempera-
ture of 175°C for an extended period can result in device failure.
While the AD8009 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tempera-
ture (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.
2.0
TJ = 150 C
1.5
8-LEAD SOIC PACKAGE
1.0
0.5
5-LEAD SOT-23 PACKAGE
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE (؇C)
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
Model
AD8009AR
AD8009AR-REEL
AD8009AR-REEL7
AD8009ARZ*
AD8009ARZ-REEL*
AD8009ARZ-REEL7*
AD8009JRT-R2
AD8009JRT-REEL
AD8009JRT-REEL7
AD8009JRTZ-REEL*
AD8009JRTZ-REEL7*
AD8009ACHIPS
*Z = Pb-free part.
Temperature
Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
ORDERING GUIDE
Package
Description
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
Die
Package
Option
R-8
R-8
R-8
R-8
R-8
R-8
RT-5
RT-5
RT-5
RT-5
RT-5
Branding
HKJ
HKJ
HKJ
HKJ
HKJ
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4– REV. F
5 Page 
AD8009
G = +10
RF = 200⍀
RL = 100⍀
VO = 2V p-p
500mV
2ns
TPC 31. 2 V Transient Response; G = +10
G = +10
RF = 200⍀
RL = 100⍀
VO = 4V p-p
1V 3ns
TPC 32. 4 V Transient Response; G = +10
OV
50mV
VS = 5V
G = +2
RF = 301⍀
RL = 150⍀
VO = 200mV p-p
1ns
TPC 33. Small Signal Transient Response;
VS = 5 V; G = +2
OV
50mV
VS = 5V
G = +2
RF = 301⍀
RL = 150⍀
VO = 200mV p-p
1ns
TPC 34. 2 V Transient Response; VS = 5 V; G = +2
8
7
CA = 2pF
3dB/div
6
5 CA = 1pF
1dB/div
4
CA = 0pF
3 1dB/div
2
1 VIN
0
50⍀
VOUT = 200mV p–p
499⍀
VOUT
100⍀
CA 499⍀
–1
12
9
6
3
0
–3
–6
–9
–12
–15
1 10 100 1000
FREQUENCY (MHz)
TPC 35. Small Signal Frequency Response vs.
Parasitic Capacitance
CA = 1pF
CA = 2pF
VIN
50⍀
CA
VOUT
499⍀ 100⍀
499⍀
CA = 0pF
VOUT = 200mV p–p
VS = ؎5V
40mV
1.5ns
TPC 36. Small Signal Pulse Response vs.
Parasitic Capacitance
–10–
REV. F
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet AD8009.PDF ] | |
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