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Número de pieza | BCW30 | |
Descripción | PNP General Purpose Amplifier | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCW30 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! BCW30
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 300mA.
• Sourced from process 68.
3
2
1
SOT-23
Mark: C2
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector current
- Continuous
TJ, Tstg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-32
-32
-5.0
-500
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)CBO
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
IC = -10µA, IE = 0
IC = -2.0mA, IB = 0
IC = -10µA, IE = 0
IC = -10µA, IC = 0
VCB = -32V, IE = 0
VCB = -32V, IE = 0, TA = +100°C
-32
-32
-32
-5.0
-100
-10
V
V
V
V
nA
µA
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
VCE = -5.0V, IC = -2.0mA
215
-0.6
500
-0.3 V
-0.7 V
NF Noise Figure
VCE = -5.0V, IC = -200µA
RS = 2.0kΩ, f = 1.0kHz
BW = 200Hz
10 dB
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BCW30.PDF ] |
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