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Fairchild Semiconductor |
Discrete POWER & Signal
Technologies
BCP54
C
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.2 A. Sourced from Process 38.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
45
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
1.5
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
BCP54
1.5
12
83.3
Units
V
V
V
A
°C
Units
W
mW /°C
°C/W
ã 1997 Fairchild Semiconductor Corporation
Electrical Characteristics
Symbol
Parameter
NPN General Purpose Amplifier
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
45
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
45
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0 V
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 125°C
VEB = 5.0 V, IC = 0
100 nA
10 µA
10 µA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 5.0 mA, VCE = 2.0 V
IC = 150 mA, VCE = 2.0 V
IC = 500 mA, VCE = 2.0 V
IC = 500 mA, IB = 50 mA
IC = 500 mA, VCE = 2.0 V
25
40 250
25
0.5
1.0
V
V
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
400 VCE = 5V
300
200
- 40 ºC
100
125 °C
25 °C
0
0.001
0.01 0.1
12
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
β = 10
0.5
0.4 125 ºC
0.3 25°C
0.2
0.1 - 40 ºC
0
0.01
0.1 1
I C - COLLECTOR CURRENT (A)
3
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