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BF245 반도체 회로 부품 판매점

N-Channel Amplifiers



Fairchild Semiconductor 로고
Fairchild Semiconductor
BF245 데이터시트, 핀배열, 회로
BF245A/BF245B/BF245C
N-Channel Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50.
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
PD Total Device Dissipation @TA=25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
1 TO-92
1. Gate 2. Source 3. Drain
Value
30
-30
10
350
2.8
- 55 ~ 150
Units
V
V
mA
mW
mW/°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS
VGS
Gate-Source Breakdown Voltage
Gate-Source
BF245A
BF245B
BF245C
VDS = 0, IG = 1µA
VDS = 15V, ID = 200µA
VGS(off) Gate-Source Cut-off Voltage
IGSS
Gate Reverse Current
On Characteristics
VDS = 15V, ID = 10nA
VGS = -20V, VGS = 0
IDSS
Zero-Gate Voltage Drain Current
BF245A
BF245B
BF245C
VGS = 15V, VGS = 0
On Characteristics
gfs Common Source Forward
Transconductance
VGS = 15V, VGS = 0, f = 1KHz
Min. Max. Units
-30
-0.4 -2.2
-1.6 -3.8
-3.2 -7.5
-0.5 -8
-5
V
V
V
nA
2 6.5 mA
6 15
12 25
3 6.5 mmhos
©2003 Fairchild Semiconductor Corporation
Rev. A1, June 2003


BF245 데이터시트, 핀배열, 회로
Package Dimensions
TO-92
4.58
+0.25
–0.15
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
0.38
+0.10
–0.05
©2003 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, June 2003




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BF245 amplifier

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