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Fairchild Semiconductor |
BDW93/A/B/C
Hammer Drivers,
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94, BDW94A, BDW94B and BDW94C respectively
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
VCEO
Collector-Emitter Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
IC
ICP
IB
PC
TJ
TSTG
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
45
60
80
100
45
60
80
100
12
15
0.2
80
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Rθjc Thermal Resistance
Junction to Case
Value
1.5
Units
°C/W
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO(sus)
* Collector-Emitter Sustaining Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
IC = 100mA, IB = 0
ICBO
ICEO
IEBO
hFE
Collector Cut-off Current
: BDW93
: BDW93A
: BDW93B
: BDW93C
Collector Cut-off Current
: BDW93
: BDW93A
: BDW93B
: BDW93C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
VF * Parallel Diode Forward Voltage
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 45V, IB = 0
VCE = 60V, IB = 0
VCE = 80V, IB = 0
VCE = 100V, IB = 0
VEB = 5V, IC = 0
VCE = 3V, IC = 3A
VCE = 3V, IC = 5A
VCE = 3V, IC = 10A
IC = 5A, IB = 20mA
IC = 10A, IB = 100mA
IC = 5A, IB = 20mA
IC = 10A, IB = 100mA
IF = 5A
IF = 10A
Min. Typ. Max. Units
45 V
60 V
80 V
100 V
100 µA
100 µA
100 µA
100 µA
1 mA
1 mA
1 mA
1 mA
2 mA
1000
750
100
20000
2V
3V
2.5 V
4V
1.3 2 V
1.8 4 V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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