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Fairchild Semiconductor |
BDW23/A/B/C
Hammer Drivers, Audio Amplifiers
Applications
• Power Darlington TR
• Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
VCEO
Collector-Emitter Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
45
60
80
100
45
60
80
100
5
6
8
0.2
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICBO
ICEO
IEBO
hFE
Collector-Emitter Sustaining Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
Collector Cut-off Current
: BDW23
: BDW23A
: BDW23B
: BDW23C
Collector Cut-off Current
: BDW23
: BDW23A
: BDW23B
: BDW23C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
* Base-Emitter Saturation Voltage
* Base-Emitter ON Voltage
VF * Parallel Diode Forward Voltage
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
IC = 100mA, IB = 0
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 22V, IB = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
VEB = 5V, IC = 0
VCE = 3V, IC = 1A
VCE = 3V, IC = 2A
VCE = 3V, IC = 6A
IC = 2A, IB = 8mA
IC = 6A, IB = 60mA
IC = 2A, IB = 8mA
VCE = 3V, IC = 1A
VCE = 3V, IC = 6A
IF = 2A
Min.
Typ.
Max.
Unit
s
45 V
60 V
80 V
100 V
200 µA
200 µA
200 µA
200 µA
1000
750
100
500 µA
500 µA
500 µA
500 µA
2 mA
20000
2V
3V
2.5 V
2.5 V
3V
1.8 V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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