파트넘버.co.kr BGY80 데이터시트 PDF


BGY80 반도체 회로 부품 판매점

CATV amplifier modules



NXP Semiconductors 로고
NXP Semiconductors
BGY80 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
BGY80; BGY81
CATV amplifier modules
Product specification
File under Discrete Semiconductors, SC16
Philips Semiconductors
February 1995


BGY80 데이터시트, 핀배열, 회로
Philips Semiconductors
CATV amplifier modules
Product specification
BGY80; BGY81
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
TiPtAu metallized crystals ensure
optimal reliability.
DESCRIPTION
Hybrid amplifier modules for CATV
systems operating over a frequency
range of 40 to 450 MHz at a voltage
supply of (DC). The BGY80 is
intended for use as a 12.5 dB
pre-amplifier and the BGY81 as a
12.5 dB final amplifier.
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5 +VB
7 common
8 common
9 output
fpage
123 5 789
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
Itot
PARAMETER
power gain
total current consumption (DC)
BGY80
BGY81
CONDITIONS
f = 50 MHz
f = 450 MHz
VB = 24 V
MIN.
12
12.5
TYP.
MAX.
13
14
UNIT
dB
dB
180 200 mA
220 240 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
Vi RF input voltage
Tstg storage temperature
Tmb operating mounting base temperature
MIN.
40
20
MAX.
65
+100
+100
UNIT
dBmV
°C
°C
February 1995
2




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BGY80 amplifier

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