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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D727
BGY282
dual band UHF amplifier module
for GSM900 and GSM1800
Preliminary specification
2001 Dec 04
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800 BGY282
FEATURES
• Dual band GSM amplifier
• 3.5 V nominal supply voltage
• 33 dBm output power for GSM1800
• 35 dBm output power for GSM900
• Easy output power control by DC voltage
• Internal input and output matching
• Easy band selection by DC voltage
• Suited for GPRS class 12 (duty cycle 4 : 8).
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
DESCRIPTION
The BGY282 is a power amplifier module in a SOT632A
surface mounted ceramic package with a plastic cap.
The module consists of two separated line-ups, one for
GSM900 and one for GSM1800 with internal power
control, input and output matching.
PINNING - SOT632A
PIN
1
2
3, 6, 9, 12
4
5
7
8
10
11
DESCRIPTION
RF input 1 (GSM900)
VAPC
Ground
VS1 (GSM900)
RF output 1 (GSM900)
RF output 2 (GSM1800)
VS2 (GSM1800)
Vband
RF input 2 (GSM1800)
12 3 45
12 6
11 10
9
87
Bottom view
MBL253
Fig.1 Simplified outline
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF
OPERATION
f
(MHz)
Pulsed; δ = 1 : 8
880 to 915
1710 to 1785
VS
(V)
3.5
3.5
VAPC
PL
η ZS, ZL
(V) (dBm) (%)
(Ω)
≤2.2 typ. 35
50
50
≤2.2 typ. 33
45
50
2001 Dec 04
2
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