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BGY282 반도체 회로 부품 판매점

dual band UHF amplifier module for GSM900 and GSM1800



NXP Semiconductors 로고
NXP Semiconductors
BGY282 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D727
BGY282
dual band UHF amplifier module
for GSM900 and GSM1800
Preliminary specification
2001 Dec 04


BGY282 데이터시트, 핀배열, 회로
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800 BGY282
FEATURES
Dual band GSM amplifier
3.5 V nominal supply voltage
33 dBm output power for GSM1800
35 dBm output power for GSM900
Easy output power control by DC voltage
Internal input and output matching
Easy band selection by DC voltage
Suited for GPRS class 12 (duty cycle 4 : 8).
APPLICATIONS
Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
DESCRIPTION
The BGY282 is a power amplifier module in a SOT632A
surface mounted ceramic package with a plastic cap.
The module consists of two separated line-ups, one for
GSM900 and one for GSM1800 with internal power
control, input and output matching.
PINNING - SOT632A
PIN
1
2
3, 6, 9, 12
4
5
7
8
10
11
DESCRIPTION
RF input 1 (GSM900)
VAPC
Ground
VS1 (GSM900)
RF output 1 (GSM900)
RF output 2 (GSM1800)
VS2 (GSM1800)
Vband
RF input 2 (GSM1800)
12 3 45
12 6
11 10
9
87
Bottom view
MBL253
Fig.1 Simplified outline
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF
OPERATION
f
(MHz)
Pulsed; δ = 1 : 8
880 to 915
1710 to 1785
VS
(V)
3.5
3.5
VAPC
PL
η ZS, ZL
(V) (dBm) (%)
()
2.2 typ. 35
50
50
2.2 typ. 33
45
50
2001 Dec 04
2




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BGY282 amplifier

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