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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D248
BGD885
CATV amplifier module
Product specification
Supersedes data of 1997 Apr 14
File under Discrete Semiconductors, SC16
1998 Mar 12
Philips Semiconductors
CATV amplifier module
Product specification
BGD885
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
DESCRIPTION
Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
PINNING - SOT115D
PIN
1
2, 3, 5, 6, 7
4
8
9
DESCRIPTION
input
common
10 V, 200 mA supply terminal
+VB
output
handbook, halfpage
123 456789
Side view
MBK049
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
Itot
PARAMETER
power gain
total current consumption (DC)
CONDITIONS
f = 50 MHz
VB = 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VB DC supply voltage
Vi RF input voltage
Tstg storage temperature
Tmb operating mounting base temperature
MIN.
16.5
−
MAX.
17.5
450
UNIT
dB
mA
MIN.
−
−
−40
−20
MAX.
26
65
+100
+100
UNIT
V
dBmV
°C
°C
1998 Mar 12
2
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