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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D252
BGD814
CATV amplifier module
Preliminary specification
Supersedes data of 2000 Jan 04
2000 Apr 19
Philips Semiconductors
CATV amplifier module
Preliminary specification
BGD814
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115J
PIN
1
2 and 3
5
7 and 8
9
DESCRIPTION
input
common
+VB
common
output
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
123 5 789
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Gp power gain
Itot total current consumption (DC)
CONDITIONS
f = 45 MHz
f = 870 MHz
VB = 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VB
Vi
Tstg
Tmb
PARAMETER
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
MIN.
19.7
20.5
380
MAX.
20.3
21.5
410
UNIT
dB
dB
mA
MIN.
−
−
−40
−20
MAX.
30
70
+100
+100
UNIT
V
dBmV
°C
°C
2000 Apr 19
2
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