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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD804N
CATV amplifier module
Product specification
Supersedes data of 1997 Oct 28
1999 Mar 26
Philips Semiconductors
CATV amplifier module
Product specification
BGD804N
FEATURES
• Extremely flat gain response
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Excellent return loss properties
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 860 MHz frequency
range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5 +VB
7 common
8 common
9 output
handbook, halfpage
123 5 789
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Gp power gain
Itot total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 860 MHz
VB = 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VB supply voltage
Vi RF input voltage
Tstg storage temperature
Tmb mounting base operating temperature
MIN.
19.5
20
−
MAX.
20.5
−
410
UNIT
dB
dB
mA
MIN.
−
−
−40
−20
MAX.
25
65
+100
+100
UNIT
V
dBmV
°C
°C
1999 Mar 26
2
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