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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD702MI
CATV amplifier module
Product specification
Supersedes data of 1997 Mar 25
File under Discrete Semiconductors, SC16
1998 Mar 13
Philips Semiconductors
CATV amplifier module
Product specification
BGD702MI
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability
• Mirrored image pinning of the BGD702.
APPLICATIONS
• CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 output
2 common
3 common
5 +VB
7 common
8 common
9 input
handbook, halfpage
123 5 789
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
PARAMETER
power gain
Itot total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 750 MHz
VB = 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Vi
Tstg
Tmb
PARAMETER
RF input voltage
storage temperature
operating mounting base temperature
MIN.
18
18.5
−
MAX.
19
−
435
UNIT
dB
dB
mA
MIN.
−
−40
−20
MAX.
65
+100
+100
UNIT
dBmV
°C
°C
1998 Mar 13
2
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