파트넘버.co.kr BGA420 데이터시트 PDF


BGA420 반도체 회로 부품 판매점

Si-MMIC-Amplifier in SIEGET 25-Technologie



Infineon Technologies AG 로고
Infineon Technologies AG
BGA420 데이터시트, 핀배열, 회로
BGA420
Si-MMIC-Amplifier in SIEGET 25-Technologie
 Cascadable 50 -gain block
 Unconditionally stable
 Gain |S21|2 = 13 dB at 1.8 GHz
IP3out = +13 dBm at 1.8 GHz
(VD = 3 V, ID = typ. 6.7 mA)
 Noise figure NF = 2.3 dB at 1.8 GHz
 Reverse isolation > 28 dB and
return loss IN / OUT > 12 dB at 1.8 GHz
3
4
2
1 VPS05605
VD
4
Circuit Diagram
3 OUT
1
IN
2
GND
EHA07385
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BGA420
BLs 1, IN 2, GND 3, OUT 4, VD SOT343
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
TS = 110 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Symbol
ID
VD
Ptot
PRFin
Tj
TA
Tstg
Value
15
6
90
0
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
 410
K/W
1 Jan-29-2002


BGA420 데이터시트, 핀배열, 회로
BGA420
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics VD = 3 V, Zo = 50 
Device current
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Reverse isolation
f = 1.8 GHz
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Intercept point at the output
f = 1 GHz
1dB compression point
f = 1 GHz
Return loss input
f = 1.8 GHz
Return loss output
f = 1.8 GHz
ID
|S21|2
S12
NF
IP3out
P-1dB
RLin
RLout
5.4 6.7
17 19
15 17
11 13
25 28
8 mA
dB
-
-
-
-
- 1.9 2.3
- 2.2 2.6
- 2.3 2.7
10 13
- dBm
-6 -2.5
-
8 11 - dB
12 16
-
Typical biasing configuration
100 pF 10 nF
+VD
100 pF
43
RF OUT
BGA 420
12
100 pF
GND
RF IN
EHA07386
Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device
to provide a low impedance path.
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground.
2 Jan-29-2002




PDF 파일 내의 페이지 : 총 6 페이지

제조업체: Infineon Technologies AG

( infineon )

BGA420 amplifier

데이터시트 다운로드
:

[ BGA420.PDF ]

[ BGA420 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BGA420

Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 -gain block Unconditionally stable) - Siemens Semiconductor Group



BGA420

Si-MMIC-Amplifier in SIEGET 25-Technologie - Infineon Technologies AG



BGA425

Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable) - Siemens Semiconductor Group



BGA427

Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) - Siemens Semiconductor Group



BGA427

Si-MMIC-Amplifier in SIEGET 25-Technologie - Infineon Technologies AG



BGA428

BGA428 High Gain/ Low Noise Amplifier - Infineon Technologies AG