|
Siemens Semiconductor Group |
BGA 318
Silicon Bipolar MMIC-Amplifier
Preliminary data
• Cascadable 50 Ω-gain block
• 16 dB typical gain at 1.0 GHz
• 12 dBm typical P-1dB at 1.0 GHz
• 3 dB-bandwidth: DC to 1.2 GHz
RF IN 3
Circuit Diagram
4
1 RF OUT/Bias
3
2
1 VPS05178
Type Marking Ordering Code
BGA 318 BNs Q62702-G0043
2, 4 GND
EHA07312
Pin Configuration
1 RFout/bias 2 GND 3 RFinput
Package
4 GND SOT-143
Maximum Ratings
Parameter
Device current
Total power dissipation, TS ≤ 99 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
ID
Ptot
PRFin
Tj
TA
Tstg
RthJS
Value
60
250
5
150
-65 ...+150
-65 ...+150
Unit
mA
mW
dBm
°C
≤ 205
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109498-1-1919-081
BGA 318
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (VD = 4.7 V, Zo = 50 Ω)
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
|S21|2
dB
- 18 -
- 16 -
- 12 -
Insertion point gain flatness
f = 0.1 GHz to 0.6 GHz
∆ |S21|2
- +-0.7 -
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 2 GHz
NF
- 3.5 -
- 4-
- 5-
1dB compression point
f = 1 GHz
P-1dB
- 12 - dBm
Return loss input
f = 0.1 GHz to 2 GHz
RLin
- 14 - dB
Return loss output
f = 0.1 GHz to 3 GHz
RLout
- 10 -
Typical biasing configuration
ΙD
min.VCC = 7 V
R Bias
C Block
4
IN 3 1
2
RFC (optional)
C Block
VD
OUT
EHA07313
SSeemmicioconndduuctcotor rGGrorouupp
22
RBias = VCC - VD / ID
VD = 4.7V
Sep-109498-1-1919-081
|