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BGA2709 반도체 회로 부품 판매점

MMIC wideband amplifier



NXP Semiconductors 로고
NXP Semiconductors
BGA2709 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BGA2709
MMIC wideband amplifier
Product specification
Supersedes data of 2002 Feb 05
2002 Aug 06


BGA2709 데이터시트, 핀배열, 회로
Philips Semiconductors
MMIC wideband amplifier
Product specification
BGA2709
FEATURES
Internally matched to 50
Very wide frequency range (3.6 GHz at 3 dB bandwidth)
Flat 23 dB gain (DC to 2.6 GHz at 1 dB flatness)
12.5 dBm saturated output power at 1 GHz
High linearity (22 dBm OIP3 at 1 GHz)
Unconditionally stable (K > 1.2).
PINNING
PIN
1
2, 5
3
4
6
VS
GND2
RF out
GND1
RF in
DESCRIPTION
APPLICATIONS
Cable systems
LNB IF amplifiers
General purpose
ISM.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
654
1
63
123
4 2, 5
Top view
MAM455
Marking code: E3-.
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
IS
|s21|2
NF
PL(sat)
PARAMETER
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
CONDITIONS
f = 1 GHz
f = 1 GHz
f = 1 GHz
TYP.
5
23.5
22.7
4
12.5
MAX.
6
UNIT
V
mA
dB
dB
dBm
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
VS DC supply voltage
RF input AC coupled
IS supply current
Ptot total power dissipation
Ts 90 °C
Tstg storage temperature
Tj operating junction temperature
PD maximum drive power
MIN.
65
MAX.
6
35
200
+150
150
10
UNIT
V
mA
mW
°C
°C
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Aug 06
2




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BGA2709 amplifier

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