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PDF BFW43 Data sheet ( Hoja de datos )
| Número de pieza | BFW43 | |
| Descripción | HIGH VOLTAGE AMPLIFIER | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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BFW43
HIGH VOLTAGE AMPLIFIER
DESCRIPTION
The BFW43 is a silicon planar epitaxial PNP
transistors in Jedec TO-18 metal case. It is
designed for use in amplifiers where high voltage
and high gain are necessary. In particular, its
feature a VCEO of 150V are specified over a wide
range of curent.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
V EBO
IC
Ptot
Tstg
Tj
Parameter
Collect or-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb ≤ 25 oC
at Tcase ≤ 25 oC
St orage Temperature
Max. Operating Junction Temperature
November 1997
Value
-150
-150
-6
-0.1
0.4
1.4
-55 to 200
200
Unit
V
V
V
A
W
W
oC
oC
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1 page  
BFW43
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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...
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BFW43.PDF ] | |
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