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Galaxy Microelectronics |
NPN General Purpose Amplifier
FEATURES
z Super Mini Packaged Transistor for
Hybrid Circuits.
Pb
Lead-free
APPLICATIONS
z General purpose switching and amplification.
z For Complementary with PNP Type BCW69/70.
Production specification
BCW71/BCW72
ORDERING INFORMATION
Type No.
Marking
BCW71
BCW72
K1
K2
SOT-23
Package Code
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PD
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total power Dissipation
Junction and Storage Temperature
50
45
5
100
350
-65 to +150
Unit
V
V
V
mA
mW
℃
C160
Rev.A
www.gmicroelec.com
1
Production specification
NPN General Purpose Amplifier
BCW71/BCW72
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN Typ
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=10μA IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO IC=2mA IB=0
45
V
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
BCW71
BCW72
V(BR)EBO IE=10μA IC=0
ICBO
VCB=20V IE=0
VCB=20V IE=0,Ta=100℃
hFE VCE=5V IC=2mA
5
110
200
V
100 nA
10 µA
220
450
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE(sat)
VBE
IC=10mA IB=0.5mA
IC=10mA IB=0.5mA
IC=50mA IB=2.5mA
IC=2mA VCE=5V
0.25 V
0.75
0.87
0.55 0.7
V
V
Collector output capacitance
Cob IE=Ie=0,VCB=10V,f=1MHz
Transition frequency
Noise figure
fT
VCE=5V IC=10mA
f=100MHz
NF
VCE=5V IC=200μA RS=2kΩ
f=1kHz B=200Hz
300
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
4.0
10
pF
MHz
dB
C160
Rev.A
www.gmicroelec.com
2
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