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Galaxy Microelectronics |
NPN General Purpose Amplifier
FEATURES
z For general AF application.
z Complementary PNP type available
BC807.
z High collector current, high current gain.
z Low collector-emitter saturation voltage.
Pb
Lead-free
Production specification
BC817-16/-25/-40
ORDERING INFORMATION
Type No.
Marking
BC817-16
BC817-25
BC817-40
6A
6B▪
6C
SOT-23
Package Code
SOT-23
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
50
45
5
500
300
-55 to +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C042
Rev.B
www.gmicroelec.com
1
Production specification
NPN General Purpose Amplifier
BC817-16/-25/-40
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=10μA IE=0
50
Collector-emitter breakdown voltage V(BR)CEO IC=10mA IB=0
45
Emitter-base breakdown voltage
V(BR)EBO IE=10μA IC=0
5
Collector cut-off current
ICBO
VCB=25V IE=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE
VCE(sat)
VEB=4V IC=0
VCE=1V IC=100mA
VCE=1V IC=300mA
IC=500mA IB=50mA
100
160
250
60
100
170
Base-emitter saturation voltage
VBE(sat)
IC=500mA IB=50mA
Collecter capacitance
Transition frequency
Cob VCB=10V,f=1MHz
fT
VCE=5V IC=50mA
f=100MHz
TYP MAX UNIT
V
V
V
0.1 μA
0.1 μA
250
400
600
0.7 V
1.2 V
6 pF
170 MHz
CLASSIFICATION OF HFE(1)
Rank
BC817-16
Range
100-250
Marking
6A
BC817-25
160-400
6B▪
BC817-40
250-600
6C
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C042
Rev.B
www.gmicroelec.com
2
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