J300 반도체 회로 부품 판매점
JFET HIGH FREQUENCY AMPLIFIER
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 Motorola Semiconductors |
J300
CASE 29-02, STYLE 5
TO-92 (TO-226AA)
JFET
HIGH FREQUENCY AMPLIFIER
—N-CHANNEL DEPLETION
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate Current
Total Device Dissipation <S T/\ = 25°C
Derate above 25°C
Lead Temperature
(1/16" from Case for 10 Seconds)
Junction Temperature Range
Storage Temperature Range
Symbol
VDG
lG
PD
tl
Tj
Tstg
Value
-25
10
350
3.5
300
-55 to +150
- 55 to + 1 50
Unit
Vdc
mA
mW
mW/°C
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Ta ..= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
G(l = -1.0 mA, V DS = 0)
Gate Reverse Current
(Vqs = -15 V, VDS = 0)
Gate Source Cutoff Voltage
(Vds = 10 V, Dl = 1.0 mA)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VDS = 10 V, VG S = 0)
Gate-Source Forward Voltage
(V DS = G0, l = 1.0 mA)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(Vqs = 10 V, Id = 5.0 mA, f = 1.0 kHz)
Output Admittance
(V DS = 1° V, Id = 5.0 mA, f = 1.0 kHz)
Input Capacitance
(Vds '= 10 V, Dl = 5.0 mA, f = 1.0 MHz)
Reverse Transfer Capacitance
(Vds = 1° V, Id = 5.0 mA, f = 1.0 MHz)
Symbol
V(BR)GSS
'GSS
VGS(off)
Min
-25
—
-1.0
!DSS
VGS(f)
6.0
—
Max
—
500
-6:0
30
1.0
Unit
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Vdc
PA
Vdc
mA
Vdc
lYfsl
Ivosl
Cjss
C rss
4500
—
—
—
9000
200
5.5
1.7
/jmhos
/xmhos
pF
PF
6-112
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제조업체: Motorola Semiconductors
( motorola )
J300 amplifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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