파트넘버.co.kr 3N210 데이터시트 PDF


3N210 반도체 회로 부품 판매점

DUAL GATE MOSFET VHF AMPLIFIER



Digitron Semiconductors 로고
Digitron Semiconductors
3N210 데이터시트, 핀배열, 회로
3N209-3N210
High-reliability discrete products
and engineering services since 1977
DUAL GATE MOSFET VHF AMPLIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Drain – source voltage
Drain gate voltage
Rating
Gate current
Drain current – continuous
Total power dissipation @ TA = 25°C
Derate above 25°C
Storage channel temperature range
Operating channel temperature
Lead temperature, 1/16” from seated surface for 10 s
Symbol
VDS
VDG1
VDG2
IG1R
IG1F
IG2R
IG2F
ID
PD
Tstg
Tchannel
Value
25
30
-10
10
-10
10
30
3N209
3N210
300
1.71
-65 to 200
350
2.80
-65 to 175
200 150
260
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
OFF CHARACTERISTICS
Drain source breakdown voltage
(ID = 10µAdc, VG1S = -4.0Vdc, VG2S = 4.0Vdc)
Gate 1 – source forward breakdown voltage
(IG1 = 10mAdc, VG2S = VDS = 0)
Gate 1 – source reverse breakdown voltage
(IG1 = -10mAdc, VG2S = VDS = 0)
Gate 2 – source forward breakdown voltage
(IG2 = 10mAdc, VG1S = VDS = 0)
Gate 2 – source reverse breakdown voltage
(IG2 = -10mAdc, VG1S = VDS = 0)
Gate 1 – source cutoff voltage
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = 50µAdc)
Gate 2 – source cutoff voltage
(VDS = 15Vdc, VG1S = 0Vdc, ID = 50µAdc)
Gate 1 – terminal forward current
(VG1S = 6.0Vdc, VG2S = VDS = 0)
Gate 1 – terminal reverse current
(VG1S = -6.0Vdc, VG2S = VDS = 0)
(VG1S = -6.0Vdc, VG2S = VDS = 0, TA = 150°C)
Symbol
Min
Typ
Max
V(BR)DS
25
-
-
V(BR)G1SSF
7.0
-
22
V(BR)G1SSR
7.0
-
-22
V(BR)G2SSF
7.0
-
22
V(BR)G2SSR
-7.0
-
-22
VG1S(off)
-0.1
-
-4.0
VG2S(off)
-0.1
-
-4.0
IG1SSF
-
- 20
IG1SSR
-
-
- -20
- -10
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
°C
°C
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
nAdc
nAdc
µAdc
Rev. 20120705


3N210 데이터시트, 핀배열, 회로
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
Gate 2 – terminal forward current
(VG2S = 6.0Vdc, VG1S = VDS = 0)
Gate 2 – terminal reverse current
(VG2S = -6.0Vdc, VG1S = VDS = 0)
(VG2S = -6.0vdc, VG1S = VDS = 0, TA = 150°C)
ON CHARACTERISTICS
Gate 1 – zero voltage drain current
(VDS = 15Vdc, VG1S = 0, VG2S = 4.0Vdc)
SMALL SIGNAL CHARACTERISTICS
Forward transfer admittance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0kHz)
Input capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 5.0mAdc, f = 1.0MHz)
Reverse transfer capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 5.0mAdc, f = 1.0MHz)
Output capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 5.0mAdc, f = 1.0MHz)
Common source noise figure
(VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 10mAdc, f = 500MHz)
Common source power gain
(VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 10mAdc, f = 500MHz)
Bandwidth
(VDS = 15Vdc, VG2S = 4.0Vdc; ID = 10mAdc, f = 500MHz)
3N209-3N210
DUAL GATE MOSFET VHF AMPLIFIER
Symbol
IG2SSF
IG2SSR
IDSS
yfs
Ciss
Crss
Coss
NF
Gps
BW
Min
-
-
-
5.0
10
-
0.005
0.5
-
10
7.0
Typ
-
-
-
-
13
4.5
0.023
2.0
4.5
13
-
Max
20
-20
-10
30
20
7.0
0.030
4.0
6.0
20
17
Unit
nAdc
nAdc
µAdc
mAdc
mmhos
pF
pF
pF
dB
dB
MHz
Rev. 20120705




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3N210 amplifier

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