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PDF J308 Data sheet ( Hoja de datos )
| Número de pieza | J308 | |
| Descripción | JFET VHF/UHF Amplifiers | |
| Fabricantes | ON Semiconductor | |
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J308
JFET VHF/UHF Amplifiers
N−Channel — Depletion
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Gate−Source Voltage
Forward Gate Current
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
IGF
PD
TJ
Tstg
Value
25
25
10
350
2.8
−65 to +125
−65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
http://onsemi.com
1
23
CASE 29−11, STYLE 5
TO−92 (TO−226AA)
1 DRAIN
3
GATE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 μAdc, VDS = 0)
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0, TA = 25°C)
(VGS = −15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J308
J309
J310
ON CHARACTERISTICS
Zero −Gate −Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J308
J309
J310
Gate−Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
VGS(f)
Min
− 25
—
—
− 1.0
− 1.0
− 2.0
12
12
24
—
2 SOURCE
Typ Max
Unit
— — Vdc
— −1.0 nAdc
— −1.0 μAdc
Vdc
— −6.5
— −4.0
— −6.5
mAdc
— 60
— 30
— 60
— 1.0 Vdc
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
J308/D
1 page  
J308
C1
INPUT L1
RS = 50 Ω
C2
L2
VS
S
G
C3
U310
D
C4
C6 BW (3 dB) − 36.5 MHz
ID − 10 mAdc
VDS − 20 Vdc
L3 OUTPUT Device case grounded
RL = 50 Ω IM test tones − f1 = 449.5 MHz, f2 = 450.5 MHz
C5 C1 = 1−10 pF Johanson Air variable trimmer.
C2, C5 = 100 pF feed thru button capacitor.
L4 C3, C4, C6 = 0.5−6 pF Johanson Air variable trim-
mer.
SHIELD
VD
L1 = 1/8″ x 1/32″ x 1−5/8″ copper bar.
L2, L4 = Ferroxcube Vk200 choke.
L3 = 1/8″ x 1/32″ x 1−7/8″ copper bar.
Figure 12. 450 MHz IMD Evaluation Amplifier
Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with
C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP)
value is 29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP
values. For example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
+40
U310 JFET
+20 VDS = 20 Vdc
ID = 10 mAdc
0 F1 = 449.5 MHz
F2 = 450.5 MHz
−20
3RD ORDER INTERCEPT POINT
FUNDAMENTAL OUTPUT
−40
−60
−80
3RD ORDER IMD OUTPUT
−100
−120
−120 −100 −80 −60 −40 −20
INPUT POWER PER TONE (dBm)
0
+20
Example of intercept point plot use:
Assume two in−band signals of −20 dBm at the amplifi-
er input. They will result in a 3rd order IMD signal at
the output of −90 dBm. Also, each signal level at the
output will be −11 dBm, showing an amplifier gain of
9.0 dB and an intermodulation ratio (IMR) capability
of 79 dB. The gain and IMR values apply only for sig-
nal levels below comparison.
Figure 13. Two Tone 3rd Order Intercept Point
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet J308.PDF ] | |
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