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New Japan Radio |
NJG1146KG1
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
I GENERAL DESCRIPTION
The NJG1146KG1 is a fully matched wide band low noise
amplifier GaAs MMIC for terrestrial application.
To achieve wide dynamic range, the NJG1146KG1 offers
high gain mode and low gain mode. Selecting high gain mode
for weak signals, the NJG1146KG1 helps improve receiver
sensitivity through high gain and low noise figure.
Selecting low gain mode for strong signals, it bypasses LNA
circuit to offer higher linearity.
An small and ultra-thin package of ESON6-G1 is adopted.
I PACKAGE OUTLINE
NJG1146KG1
I APPLICATIONS
Terrestrial application from 40MHz to 900MHz
Digital TV, Set-top box and Broadband CATV applications
I FEATURES
G Operating frequency
G Operating voltage
G Package size
[High gain mode]
G Operating current
G Gain
G Noise figure
G IM2
G IM3
[Low gain mode]
G Low current consumption
G Gain(Low loss)
40MHz~900MHz
5.0V typ.
ESON6-G1 (Package size: 1.6mm x 1.6mm x 0.397mm typ.)
60mA typ.
12.0dB typ.
2.2dB typ.
52.0dB typ.
80.0dB typ.
30µA typ.
-1.0dB typ.
I PIN CONFIGURATION
(Top View)
4
RFIN
5
GND
Bias
circuit
6
VCTL
Logic
circuit
3
RFOUT2
2
NC
(GND)
1
RFOUT1
1pin INDEX
Pin Connection
1. RFOUT1
2. NC(GND)
3. RFOUT2
4. RFIN
5. GND
6. VCTL
*Exposed PAD: GND
I TRUTH TABLE “H”=VCTL(H)“L”=VCTL(L)
VCTL
LNA ON
Bypass
LNA mode
H ON
OFF
High Gain mode
L OFF
ON Low Gain mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2013-04-17
-1-
NJG1146KG1
I ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
CONDITIONS
Ta=+25°C, Zs=Zl=50 ohm
RATINGS UNITS
Drain voltage
Control voltage
Input power
Power dissipation
Operating temperature
VDD
VCTL
PIN
PD
Topr
VDD=5.0V
4-layer FR4 PCB with through-hole
(101.5x114.5mm), Tj=150°C
6.0
6.0
+10
1200
-40~+85
V
V
dBm
mW
°C
Storage temperature
Tstg
-55~+150
°C
I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS)
VDD=5.0V, Ta=+25°C, with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Operating voltage
Control voltage (High)
Control voltage (Low)
Operating current1
Operating current2
Control current
VDD
VCTL(H)
VCTL(L)
IDD1
RF OFF, VCTL=1.8V
IDD2
RF OFF, VCTL=0V
ICTL RF OFF, VCTL=1.8V
2.4 5.0 5.5
V
1.3 1.8 5.5
V
0.0 0.0 0.5
V
- 60 80 mA
- 30 50 µA
- 6 12 µA
-2-
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