AH128 반도체 회로 부품 판매점
High Linearity InGaP HBT Amplifier
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 TriQuint |
Applications
Repeaters
Mobile Infrastructure
WiMAX / WiBro
LTE / WCDMA / EDGE / CDMA
AH128
¼ W High Linearity InGaP HBT Amplifier
AH128-89G
Product Features
60 – 3500 MHz
+25 dBm P1dB
+40 dBm Output IP3
16.9 dB Gain at 2140 MHz
115 mA current draw
+5 V Single Supply
MTTF > 100 Years
Lead-free/Green/RoHS-compliant SOT-89 Package
3 Pin SOT-89 Package
Functional Block Diagram
Backside Paddle - GND
Product Description
The AH128 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance across a broad range
with +40 dBm OIP3 and +25 dBm of compressed 1dB
power while drawing 115 mA current. The AH128 is
available in a lead-free/green/RoHS-compliant SOT-89
package. All devices are 100% RF and DC tested.
The AH128 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium
power, and high efficiency are required. Internal biasing
allows the AH128 to maintain high linearity over
temperature and operate directly off a single +5V supply.
This combination makes the device an excellent candidate
for transceiver line cards in current and next generation
multi-carrier 3G base stations.
1
RF IN
23
GND RF OUT / VCC
Pin Configuration
Pin No.
1
3
2
Backside Paddle
Label
RF IN
RF OUT / VCC
GND
GND
Datasheet: Rev. B 02-25-16
© 2015 TriQuint Semiconductor, Inc
Ordering Information
Part No.
Description
AH128-89G ¼ W High Linearity InGaP HBT Amplifier
Standard T/R size = 1000 pieces on a 7” reel
- 1 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50Ω, T=25°C
Device Voltage
Rating
−65 to 150°C
Input P10dB
+6 V
Operation of this device outside the parameter ranges
given above may cause permanent damage.
AH128
¼ W High Linearity InGaP HBT Amplifier
Recommended Operating Conditions
Parameter
Case Temperature
Min Typ Max Units
−40 +85 °C
Device Voltage (VCC)
Tj for >106 hours MTTF
+3.0 +5.0 +5.25
+200
V
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=115 mA (typ.), Temp= +25°C, tuned application circuit
Parameter
Conditions (1)
Min Typ Max
Operational Frequency Range
60 3500
Test Frequency
2140
Gain
14.5 16.9
18
Input Return Loss
15
Output Return Loss
W-CDMA Channel Power(2)
−50 dBc ACLR
11
+15
Output P1dB
Output IP3
Pout=+10 dBm / tone, ∆f=1 MHz
+25
+36 +40
Noise Figure
4.6
Quiescent Collector Current
95 115 130
Thermal Resistance, θjc
Junction to case
116
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
°C/W
Typical Performance
Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit
Parameter
Conditions (1)
Typical
Frequency
920 1960
2140
Gain
19.7 17.6
16.9
Input Return Loss
12 15
15
Output Return Loss
W-CDMA Channel Power
−50 dBc ACLR, Note 2
8.2 11
+15 +15.5
11
+15
Output P1dB
Output IP3
∆f=1 MHz, Note 3
+24.7
+40
+25.5
+40
+25
+40
Noise Figure
4.6 4.6
4.6
Notes:
1. Test conditions unless otherwise noted: VCC=+5 V, Temp=+25 °C, 50 Ω system.
2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW
3. POUT = +13 dBm/tone for 920 MHz, +11 dBm/tone for 1960 MHz and +10 dBm/tone for 2140 MHz.
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Datasheet: Rev. B 02-25-16
© 2015 TriQuint Semiconductor, Inc
- 2 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
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( triquint )
AH128 amplifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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