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RFCA8830 반도체 회로 부품 판매점

GaAs pHEMT RF balanced amplifier IC



RF Micro Devices 로고
RF Micro Devices
RFCA8830 데이터시트, 핀배열, 회로
DRAFT
DRAFT
RFCA8830
High Linearity, Low Noise, 19 dB Gain Block
RFMD + TriQuint = Qorvo
The RFCA8830 is a GaAs pHEMT RF balanced amplifier IC with a
45MHz to 1218MHz operating bandwidth. This IC is designed to
provide a low noise, high linearity, and high gain for use as a Post
Amplifier in Optical Receivers or low noise balanced preamp. The
IC uses a 5V power supply for applications requiring lower power
dissipation. It is designed to support the new DOCSIS 3.1 Data
Over Cable specification.
18
SOIC-8 with Exposed Pad
Features
45MHz to 1218MHz Operation
5V Operation
>75dBc CSO and CTB at
34dBmV/ch, 79 channel flat
19dB Gain
Low Noise Figure: >2dB
27
36
Applications
HFC Optical Nodes
Balanced Antenna Applications
DOCSIS 3.1 Systems
4
Functional Block Diagram
5
Ordering Information
RFCA8830PCBA-410
RFCA8830SB
RFCA8830SQ
RFCA8830SR
RFCA8830TR7
Fully assembled evaluation board
Sample bag with 5 pieces
Sample bag with 25 pieces
7" Reel with 100 pieces
7" Reel with 2500 pieces
Revision DS 2015-08-24
DRAFT© 2015 RF Micro Devices, Inc.
- 1 of 11-
Disclaimer: Subject to change without notice
DRAFTwww.rfmd.com / www.qorvo.com


RFCA8830 데이터시트, 핀배열, 회로
DRAFT
DRAFT
RFCA8830
RFMD + TriQuint = Qorvo
Absolute Maximum Ratings
Parameter
Supply Voltage (VDD)
Maximum CW Input Power for VDD = +5V
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
ESD Rating Human Body Model (HBM)
Moisture Sensitivity Level
Electrical Specifications
Parameter
Specification
Min Typ Max
General Performance
Supply Voltage (VDD)
Device Operating current
Operating Frequency
RSmanaglleSignal Gain
Gain Flatness
Output IP3
Output IP2
Output P1dB
Output Return Loss
Input Return Loss
Noise Figure (Balun
Insertion Loss Included)
CSO
CTB
XMOD
Thermal Resistance
(Junction to Reference)
4.5 5
5.5
277
45 1218
19.4
19.2
18.7
±0.5
41
40
39
80
67
67
24
-19
-16
-15
-19
-14
-16
1.8
2.5
-85
-77
-63
41
Unit
V
mA
MHz
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
°C/W
Rating
+7.0
+3
40 to +85
40 to +150
+160
TBD
MSL1
Unit
V
dBm
°C
°C
°C
V
Condition
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame
retardant, and <2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Electrical Specifications, TA=25°C, VDD=+5VDC,75Ω Zo
5V VDD
50MHz
600MHz
1200MHz
50MHz, IM spacing 6MHz, POUT = 5dBm per tone
600MHz
1200MHz
50MHz, IM spacing 30MHz, POUT = 0dBm per tone
600MHz
1200MHz
600MHz
50MHz
600MHz
1200MHz
50MHz
600MHz
1200MHz
500MHz
1200MHz
79 Channel, Flat tilt, +34dBmV/ch
79 Channel, Flat tilt, +34dBmV/ch
79 Channel, Flat tilt, +34dBmV/ch
Reference is measured on the backside of PCB under IC
Revision DS 2015-08-24
DRAFT© 2015 RF Micro Devices, Inc.
- 2 of 11-
Disclaimer: Subject to change without notice
DRAFTwww.rfmd.com / www.qorvo.com




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RFCA8830 amplifier

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RFCA8830

GaAs pHEMT RF balanced amplifier IC - RF Micro Devices