파트넘버.co.kr RFAM2790 데이터시트 PDF


RFAM2790 반도체 회로 부품 판매점

45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier



RF Micro Devices 로고
RF Micro Devices
RFAM2790 데이터시트, 핀배열, 회로
RFAM2790
45MHz to
1003MHz
GaAs Edge
QAM Inte-
grated Ampli-
fier
RFAM2790
45MHz to 1003MHz GaAs Edge QAM
Integrated Amplifier
Package: 9-pin, 11.0mm x 11.0mm x 1.375mm
POWER ENABLE
V+
Features
Excellent Linearity
Extremely High Output Capability
Voltage Controlled Attenuator
Power Enable Feature
Optimal Reliability
Low Noise
Unconditionally Stable Under all
Terminations
27dB Typical Gain at 1003MHz
410mA Typical at 12VDC
Applications
45MHz to 1003MHz
Downstream Edge QAM RF
Modulators
Headend Equipment
INPUT
OUTPUT
Preamp
Driver
ATTENUATOR
ADJUST
Functional Block Diagram
Product Description
The RFAM2790 is an integrated edge QAM amplifier module. The part employs
GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power
enable feature, has high output capability, and is operated from 45MHz to
1003MHz. It provides excellent linearity and superior return loss performance with
low noise and optimal reliability.
Ordering Information
RFAM2790SB
RFAM2790SR
RFAM2790TR7
RFAM2790TR13
RFAM2790PCBA-410
Sample bag with 5 pieces
7" Reel with 100 pieces
7" Reel with 250 pieces
13" Reel with 750 pieces
Fully Assembled Evaluation Board
DS121001
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
GaAs pHEMT
Si CMOS
GaN HEMT
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
SOI
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 6


RFAM2790 데이터시트, 핀배열, 회로
RFAM2790
Absolute Maximum Ratings
Parameter
V+ DC Supply Over-Voltage
(5 minutes)
Storage Temperature
Operating Mounting Base
Temperature
Power Enable Voltage
Rating
14
-40 to +100
-30 to +100
10
Unit
V
°C
°C
V
Parameter
Overall
Power Gain
Slope[1]
Flatness of Frequency Response
Input Return Loss
Output Return Loss
Noise Figure
Total Current Consumption (DC)
Distortion
Adjacent Channel Power Ratio
(ACPR); N = 4 contiguous 256QAM
channels
Specification
Min. Typ. Max.
26.0
-0.5
18
16
27.0
27.0
0.0
0.5
20
18
4.0
410.0
28.0
1.0
1.0
5.0
450.0
-58
-60
-63
-65
2nd Order Harmonic (HD2); N = 1
256QAM channel
3rd Order Harmonic (HD3); N = 1
256QAM channel
CTB
XMOD
CSO
CIN
-63
-63
-67
-60
-70
64
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
Unit
dB
dB
dB
dB
dB
dB
dB
mA
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dB
Condition
V+ = 12V; TMB = 30°C; ZS = ZL = 75;
Attenuation = 0dB
f = 45MHz
f = 1003MHz
f = 45MHz to 1003MHz
f = 45MHz to 1003MHz (Peak to Valley)
f = 45MHz to 1003MHz
f = 50MHz to 1003MHz
V+ = 12V; TMB = 30°C; ZS = ZL = 75;
Attenuation = 0dB
Channel Power = 58dBmV; Adjacent channel
up to 750kHz from channel block edge
Channel Power = 58dBmV; Adjacent channel
(750kHz from channel block edge to 6MHz
from channel block edge)
Channel Power = 58dBmV; Next-adjacent
channel (6MHz from channel block edge to
12MHz from channel block edge)
Channel Power = 58dBmV; Third-adjacent
channel (12MHz from channel block edge to
18MHz from channel block edge)
Channel Power = 66dBmV; In each of 2N con-
tiguous 6MHz channels coinciding with 2nd
harmonic components (up to 1000MHz);
Channel Power = 66dBmV; In each of 3N con-
tiguous 6MHz channels coinciding with 3rd
harmonic components (up to 1000MHz);
VO = 46dBmV, flat, 79 analog channels plus 75
digital channels (-6dB offset)[2]
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS121001




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RFAM2790 amplifier

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RFAM2790

45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier - RF Micro Devices