|
ANADIGICS |
FEATURES
• InGaP HBT Technology
• -47 dBc ACPR @ ±10 MHz, +27 dBm
• 32 dB Gain
• High Efficiency
• Low Transistor Junction Temperature
• Matched for a 50 Ω System
• Low Profile Miniature Surface Mount Package;
RoHS Compliant
• Multi-Carrier Capability
APPLICATIONS
• WCDMA, HSDPA and LTE Air Interfaces
• Picocell, Femtocell, Home Nodes
• Customer Premises Equipment (CPE)
• Data Cards and Terminals
AWB7222
1.805 - 1.880 GHz
Small-Cell Power Amplifier Module
DATA SHEET - Rev 2.3
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7222 is a fully matched, Multi-Chip-Module
(MCM) designed for picocell, femtocell, and customer
premises equipment (CPE) applications. Its high
linearity and efficiency meet the extremely demanding
needs of small cell infrastructure architectures.
Designed for WCDMA, HSDPA, and LTE air interfaces
operating in the 1.805 GHz to 1.880 GHz band, the
AWB7222 delivers up to +27 dBm of LTE (E-TM1.1)
power with an ACPR better than -47 dBc. It operates
from a convenient +4.5 V supply and provides 32 dB of
gain. The device is manufactured using an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
Vcc 1 Vcc 2
RF Input
Matching
Network
Bias
Network
Matching
Network
Matching
Network
Bias
Network
Matching
Network
Power
Detector
VREF
VDET
Figure 1: Block Diagram
05/2015
RF Output
AWB7222
VREF 1
14 GND
GND 2
13 GND
GND 3
VCC1 4
RFIN 5
GND 6
12 RFOUT
11 VCC2
10 GND
9 GND
VDET 7
8 GND
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN NAME DESCRIPTION
1 VREF Reference Voltage
2 GND Ground
3 GND Ground
4
VCC1
Supply Voltage
5
RFIN
RF Input
6 GND Ground
7 VDET Detector Output
8 GND Ground
9 GND Ground
10 GND Ground
11 VCC2 Supply Voltage
12 RFOUT RF Output
13 GND Ground
14 GND Ground
2
DATA SHEET - Rev 2.3
05/2015
|