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TriQuint Semiconductor |
Applications
Satellite Communications
Point-to-Point Communications
QPA2628D
25 – 31 GHz GaAs Low Noise Amplifier
Product Features
Frequency Range: 25–31 GHz
Noise Figure: 1.7 dB (typical)
Small Signal Gain: 22 dB (typical)
P1dB: 19 dBm (typical)
IM3: −53 dBc (Pout=0 dBm/tone) (typical)
Bias: VD = 3.5 V, IDQ = 90 mA, VG = −0.46 V (typical)
Die Dimensions: 2.40 x 1.00 x 0.10 mm
Functional Block Diagram
RF IN
1
8
2
7
3
6
RF OUT
5
4
General Description
Qorvo’s QPA2628D is a high-performance, low noise
amplifier fabricated on Qorvo’s production 90nm pHEMT
(QPHT09) process. Covering 25–31 GHz, the
QPA2628D provides 22 dB small signal gain and P1dB
of 19 dBm, while supporting a noise figure of 1.7 dB and
IM3 levels of −53 dBc (at Pout=0 dBm/tone).
The QPA2628D is in die form, 2.40 x 1.00 x 0.10 mm,
with both RF ports matched to 50 ohms and with
integrated DC blocking caps on both I/O ports for simple
system integration.
The QPA2628D high performance makes it ideal for
satellite and point to point communication systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
5
6
7
8
Label
RF Input
VG1
VG2
VG3
RF Output
VD3
VD2
VD1
Ordering Information
Part
QPA2628D
ECCN Description
3A001.b.2.d
25 – 31 GHz Low
Noise Amplifier
Datasheet: Rev - 03-14-16
© 2016 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
QPA2628D
25 – 31 GHz GaAs Low Noise Amplifier
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
5.0 V
Drain Current (ID1/ID2/ID3)
Gate Voltage Range
45/45/160 mA
0 to −1.5 V
Gate Current (IG1/IG2/IG3 at 125 °C)
RF Input Power (50 Ω, 85 °C)
5.0/5.0/6.6 mA
20 dBm
Channel Temperature, TCH
175 °C
Mounting Temperature (30 seconds)
Storage Temperature
260 °C
−55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Recommended Operating Conditions
Parameter
Value
Drain Voltage
3.5 V
Drain Current (quiescent, IDQ)
90 mA
Drain Current (ID, Low noise / PSAT)
Gate Voltage (typical)
90 / 200 mA
−0.46 V
Operating Temperature Range
−40 to 85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions, unless otherwise noted: 25 °C, VD = 3.5 V, IDQ = 90 mA. Data de-embedded to MMIC bondwires.
Parameter
Min Typical Max
Frequency
25 31
Small Signal Gain
22
Noise Figure
1.7
1-dB Compression Point
19
Input Return Loss
8
Output Return Loss
14
3RD Order Intermodulation level (Pout=0 dBm/tone)
−53
Output TOI (Pout=0 dBm/tone)
Gain Temperature Coefficient
27
−0.013
Units
GHz
dB
dB
dBm
dB
dB
dBc
dBm
dBm/°C
Datasheet: Rev - 03-14-16
© 2016 TriQuint
- 2 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
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