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PDF QPA2237 Data sheet ( Hoja de datos )
| Número de pieza | QPA2237 | |
| Descripción | 10W GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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Applications
Commercial and military radar
Communications
Electronic Warfare
QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier
Product Features
Frequency Range: 0.03 – 2.5 GHz
PSAT: >40 dBm at PIN = 27 dBm
PAE: >48%
Large Signal Gain: >13 dB
Small Signal Gain: >18.5 dB
Input Return Loss: >9 dB
Output Return Loss: >9.5 dB
Bias: VD = 32 V, IDQ = 360 mA, VG = -2.1 V Typical
Wideband Flat Power
Package Dimensions: 4.0 x 4.0 x 0.85 mm
QFN 4x4 mm 20L
Functional Block Diagram
General Description
Qorvo’s QPA2237 is a wideband amplifier fabricated on
Qorvo’s production 0.25um GaN on SiC process. The
QPA2237 operates from 0.03 – 2.5 GHz and provides
greater than 10W of saturated output power with greater
than 13 dB of large signal gain and greater than 48%
power-added efficiency.
The QPA2237 is available in a low-cost, surface-mount,
20 lead, 4x4 OVM QFN. It is ideally suited to support
both radar and communication applications across
defense and commercial markets as well as electronic
warfare. The QPA2237 is fully matched to 50Ω at both
RF ports allowing for simple system integration. DC
blocks are required on both RF ports and the drain
voltage must be injected through an off chip bias-tee on
the RF output port.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1, 2, 4 – 12, 14 – 16, 18 – 20
3
13
17
Symbol
N/C
RF IN
RF OUT, VD
VG
Ordering Information
Part
QPA2237
ECCN
EAR99
Description
0.03 – 2.5 GHz 10 W
GaN Power Amplifier
Datasheet: Rev - 11-04-15
© 2015 TriQuint
- 1 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier
Typical Performance: Large Signal (CW)
The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)
Output Power vs. Frequency vs. VD
42
41 PIN = 27 dBm
40
39
38
37
36
35
34
33
0
Vd=25 V
Vd=28 V
Vd=30 V
Vd=32 V
Vd=36 V
0.5 1
IDQ = 360 mA
1.5 2 2.5
Temp. = +25°C
3 3.5 4
Frequency (GHz)
80
70
60
50
40
30
20
10
0
0
PAE vs. Frequency vs. VD
Temp. = +25°C
PIN = 27 dBm
Vd=25 V
Vd=28 V
Vd=30 V
Vd=32 V
Vd=36 V
IDQ = 360 mA
0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
Output Power vs. Freq vs. Input Power
42
41 VD = 32 V, IDQ = 360 mA
Temp. = +25°C
40
39
38
37
36 24dBm
35 25dBm
34 26dBm
27dBm
33
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
PAE vs. Frequency vs. Input Power
80
VD = 32 V, IDQ = 360 mA
70
60
50
40
30 24dBm 25dBm 26dBm 27dBm
20
Temp. = +25°C
10
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
42
VD = 32 V, IDQ = 360 mA
41
PIN = 27 dBm
40
39
38
37 -40C
+25C
36
+85C
35
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
PAE vs. Frequency vs. Temperature
80
70 PIN = 27 dBm
60
50
40
30
20 -40C
10 VD = 32 V, IDQ = 360 mA
+25C
+85C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
Datasheet: Rev - 11-04-15
© 2015 TriQuint
- 5 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier
Application Circuit (Coaxial input DC block and coaxial output bias tee)
Notes:
1.
2.
Coaxial input DC block (C7) is used for input port (RF In.)
External wide bandwidth Bias-Tee is used for output port (RF Out). VD is applied through the output Bias-
Tee.
Bias-up Procedure
1. Set ID limit to 700mA, IG limit to 15mA
2. Set VG to -5.0V
3. Set VD +32V
4. Adjust VG more positive until IDQ = 360mA (VG ~ -2.1V
Typical)
5. Apply RF signal
Bias-down Procedure
1. Turn off RF signal
2. Reduce VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD to 0V
4. Turn off VD supply
5. Turn off VG supply
Datasheet: Rev - 11-04-15
© 2015 TriQuint
- 11 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet QPA2237.PDF ] | |
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